新聞

客戶可以在我們的網頁 註冊 ,定期收取最新消息包括全新產品發佈、應用文章及更多其它資訊。如果你錯過了已發佈的消息,你可瀏覽以下的文檔。

eGaN™-Silicon Power Shoot-Out: Part 1 Comparing Figure of Merit (FOM)

分類: Articles

One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

Read the article