項目及活動

Nuclear & Space Radiation Effects Conference (NSREC) 2020

2020年12月3日星期四 - 2020年12月8日星期二
Nuclear & Space Radiation Effects Conference (NSREC) 2020
地點:Virtual Event

Webinar: Gallium Nitride (GaN) in Space Times: December 3, 2020 9:30 AM (PST) and December 8, 2020 9:30 AM (PST)
Presented by: Shengke Zhang, Ph.D., Manager of Failure Analysis at EPC

Gallium nitride devices offer dramatically improved performance over the aging Rad Hard silicon MOSFET, enabling a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. In this webinar we will explain why enhancement-mode GaN (eGaN) devices exhibit such superior radiation tolerance compared with silicon MOSFETs. Next, we will explore some of the failure mechanisms in GaN and how they impact radiation performance. We will then show how superior is the electrical performance of eGaN transistors compared with the most popular Rad Hard MOSFETs. Lastly, we will discuss some spaceborne systems where GaN is enabling higher radiation and system performance compared to silicon solutions.

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Power Conference 2020

2020年12月8日星期二 - 2020年12月9日星期三
Power Conference 2020
地點:Virtual Event

December 8, 2020 1:30 pm (CET) / 4:30 am (PST)
Easy Design Tips to Maximize Performance in Your GaN Designs Presented by: Alex Lidow, Ph.D., CEO and Co-Founder, EPC

GaN transistors are very similar in behavior to the aging power MOSFETs, and therefore power systems engineers can use their design experience to take advantage of the performance enhancements possible with GaN. In this presentation we are going to cover some of the primary design issues we see in the field with designers using GaN for the first time; First we will discuss optimal layout techniques for improved performance, then we will review some simple and inexpensive heatsinking techniques to extract even more power out of your GaN designs, and lastly we will show how the use of GaN transistors along with good design techniques can result in better EMI than achieved with power MOSFETs.

December 8, 2020 3:00 pm (CET) / 6:00 am (PST)
Alex Lidow will participate in a Q&A panel with the speakers of the first presentation session, moderated by Bodo Arlt

Book a Meeting:
Schedule an exclusive online meeting with our GaN Experts to support your design efforts during the Power Elecrtonics Conference.
Click the link to select a time to meet with the EPC team: https://calendly.com/epccorp/pwrconf20

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EPC Webinar Series

2020年12月9日星期三 11:00
EPC Webinar Series
地點:Virtual Event

氮化鎵(GaN)功率助力馬達控制器(以國語進行) Presented by: Henry Qiu, Senior FAE Manager at EPC
Special Guest Panelist: Alex Lidow , Ph.D., CEO and Co-Founder of Efficient Power Conversion

時間:上午11時 (Shenzhen time)

Join EPC to discover how to harness the power of enhancement-mode gallium nitride (eGaN&reh;) FETs and ICs for motor drives.

48 V馬達控制器為何要採用氮化鎵元件?

  • 提高精度
  • 更小型化、更輕盈
  • EMI更低
  • 更快速暫態響應

主要應用:

  • 高端電動自行車和電動踏板車
  • 協作式機械人和機械人
  • 醫療機械操作應用
  • 無人機

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PSMA網路研討會

2020年12月10日星期四 08:00
PSMA網路研討會
地點:虛擬工作坊

面向直接和間接飛行時間(ToF)光達發射器且極具成本效益的氮化鎵基解決方案 講者:應用工程總監John Glaser博士

光達是一種遙距感測方式,它將發射出的光信號與其反射進行比較,從而確定遠端目標的距離。過去十年中,氮化鎵功率場效應電晶體推動了遙距感測光達(雷射雷達)呈爆炸性增長。目前業界的光達主要有兩種:直接飛行時間(DToF)和間接飛行時間(IToF)。

典型的DToF雷射雷達發送獨立脈衝,並從反射時間計算出遠端目標的距離。 IToF雷射雷達則比較發射和反射脈衝序列。兩者都依賴短而高電流的脈衝來驅動雷射二極體發射器,脈衝電流的範圍為幾安培至幾百安培、脈衝寬度可以小於2納秒,都可以由低成本及小尺寸的氮化鎵場效應電晶體(GaN FET)實現得到。

是次網路研討會將討論面向3D成像的兩種飛行時間,其中每種技術都將在未來的自動駕駛汽車中擔當重要角色,以及氮化鎵技術如何推動光達的未來發展。 當推光達GaN IC後,氮化鎵技術改善了系統性能並顯著降低系統成本。我們將分享性能示例,包括在光達應用中,氮化鎵元件的可靠性測試結果。後者表明,光達發射器在新且極端的工作條件下,氮化鎵元件並沒有出現新的重大故障。

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Wireless Power Workshop 2020

2020年12月16日星期三 - 2020年12月18日星期五
Wireless Power Workshop 2020
地點:臺灣臺北

基於AirFuel聯盟標準的磁共振無線電源傳輸如何引爆無線充電趨勢 講者:應用工程副總裁Michael de Rooij博士

基於磁共振的無線電源傳輸的普及化進展緩慢,但大多數人同意這種方式可提供最佳的使用者體驗。 在本研討會中,我們將討論哪些因素可以引爆無線充電的大流行,包括成本、效率和豐富的技術資源,這些因素將使基於AirFuel™標準的磁共振無線電源傳輸達到引爆點。

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