項目及活動

Motor & Drive Systems Conference

2023年2月1日星期三 - 2023年2月2日星期四
Motor & Drive Systems Conference
地點:Orlando, FL

Experimental Evaluation and Optimization of GaN Inverter for Motor Drive Applications Presenter: Federico Unnia, Application Engineer, Motor Drives and Systems

This paper deals with the usage of Gallium Nitride transistors in an inverter for motor drive applications. The aim of the paper is to give guidelines to motor drive hardware designers on how to minimize the components and optimize the layout in a GaN inverter, while keeping good switching waveforms and minimizing the ringing as a possible source of electro-magnetic interference.

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ISSCC 2023

2023年2月19日星期日 11:40 - 11:45
ISSCC 2023
地點:美國加州三藩市

來自 GaN 和車用GaN的機遇講者:EPC公司首席執行長兼聯合創始人Alex Lidow博士

電動汽車和氮化鎵功率半導體是業界最近跨過臨界點、實現大規模普及化的兩項技術。這兩種技術也深深相互影響彼此未來發展之路。氮化鎵元件已經被證明爲卓越的功率半導體,其性能優於矽元件且成本更低。汽車電氣化為提高能源效率締造了全新的機會,而氮化鎵元件在前照燈、光達感應器和 48 V 配電系統等車輛應用中,有助於提高由傳統內燃機 (ICE) 驅動的汽車的安全性和效率,以及對輕度混合動力系統 (HEV) 和電池電動汽車 (BEV)的發展做出貢獻。本演講將討論在汽車中採用氮化鎵元件所帶來的好處、未來應用的軌迹,包括 GaN電晶體、GaN集成電路的技術演進,以及基於低壓 GaN技術的電動汽車牽引驅動器的新電路拓撲。

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Power Electronics International Conference

2023年4月18日星期二 - 2023年4月19日星期三
Power Electronics International Conference
地點:Brussels, Belgium

GaN Integrated Circuits are Revolutionizing Power Electronics Speaker: Marco Palma, Director of Motor Drive Systems and Applications

The latest ePower™ integrated circuits based on gallium nitride technology are revolutionizing Power Electronics applications such as dc-dc converters and motor drives as industrial drones, e-bikes, scooters, power tools. Gallium nitride technology has opened a new era in the world of power electronics because of a clear differentiation factor between GaN and silicon: medium voltage gallium nitride devices can be built on a planar technology while this is cost-prohibitive for silicon devices. Silicon devices are made on a vertical technology, making it physically impossible to have two power devices in the same chip. EPC’s GaN-on-Si planar technology allows the integration of the power section with the control in the same die. In 2014, EPC started the journey toward a power system-on-a-chip introducing a family of integrated devices comprised of multiple FETs on one chip. Practical examples of real applications with these integrated circuits will be shown at the PE International Conference.

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EEHE 2023

2023年6月13日星期二 - 2023年6月15日星期四
EEHE 2023
地點:Essen, Germany

High Power-Density, Bi-Directional, 48 V to 12 V Converter using eGaN® FETs for next generation BEV’s Speaker: : Michael de Rooij, Ph.D., Vice President of Applications Engineering

This work presents a high power-density LLC based system that addresses size, with a 23 mm x 18 mm x 10 mm volume, weighs just 15 grams and can deliver up to 750 W power for 12 V systems, with unrestricted voltage range from 11.0 V through 14.3 V, operating from a 48 V bus, with range of 36 V through 52 V.

Power Steering Application using eGaN Integrated Circuit Speaker: Marco Palma, Director of Motor Drive Systems and Applications

In motor drive applications, GaN inverters allow the increase of the PWM frequency and the drastic reduction of dead times, allowing the removal of bulky electrolytic capacitors and the reduction of overall solution dimensions. These benefits result in a reduction in size, weight, and material cost, over equivalent MOSFET-based designs. This work presents recent developments in employing GaN integrated circuit devices in a multiple-three-phase motor power steering application that requires 48V or 24V nominal voltage and up to 10 ARMS in each stator phase winding.

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