EPC90122:開發板

EPC90122: 80 V, 40 A Development Board

EPC90122開發板

The EPC90122 development board is a 80 V maximum device voltage, 40 A maximum output current, half bridge with onboard gate drives, featuring the EPC2206 enhancement mode (eGaN®) field effect transistor (FET).

The EPC90122 development board is 2” x 2” and contains two EPC2206 eGaN FETs in a half bridge configuration using the Texas Instruments LMG1205 gate driver.

To simplify the evaluation process of the EPC2206 GaN FET, all the critical components and layout for optimal switching performance are implemented. Video: How to Turn an EPC Development Board into a Prototype

立即購買
購買 eGaN FET及積體電路

Ask and EPC Engineer a Question FAQ

對EPC公司的
eGaN FET及集成电路
有任何問题嗎?
向GaN技術專家請教

EPC90122 Parameters Table
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 40 V for EPC2206.
(2) Maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermal cooling.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.