EPC9048C: 200 V, 15 A Half-Bridge Development Board


The EPC9048C development board is a 200 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2034C enhancement mode (eGaN®) field effect transistor (FET).

The EPC9048C development board is 1.5” x 2” and contains two EPC2034C eGaN FETs in a half bridge configuration. As supplied, the high side gate drive uses a digital isolator and both FETs use the Texas Instruments UCC27611 gate driver.

To simplify the evaluation process of the EPC2034C GaN FET, all the critical components and layout for optimal switching performance are implemented. Video: How to Turn an EPC Development Board into a Prototype

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EPC9048C Parameters Table
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 200 V for EPC2034C.
(2) Maximum current depends on die temperature – actual maximum current will be subject to switching frequency, bus voltage and thermal cooling may be lower or higher. Please see the EPC2034C datasheet for further information.
(3) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.