eGaN FET Reliability


eGaN devices have been in volume production since March 2010 and have demonstrated very high reliability in both laboratory testing and high-volume customer applications. eGaN devices have a remarkable field reliability record.

EPC has undertaken extensive reliability testing to continue the understanding of the behavior of GaN devices over a wide range of stress conditions.

The results of these reliability studies show that GaN is an extremely robust technology that continues to improve at a rapid pace.

EPC is committed to subjecting GaN devices to rigid reliability standards and sharing the results with the power conversion industry. We continue to add new documents to this knowledge base regularly.

GaN Power Bench

GaN Power Bench不斷添加設計工具、模型和性能模擬,以協助您的設計。

Ask and EPC Engineer a Question FAQ

您有關於氮化鎵產品的可靠性的提問嗎? 參看關於產品可靠性的常見問題解答 向氮化鎵技術專家提問