第六階段可靠性測試報告

Efficient Power Conversion (EPC) Corporation introduced its first enhancement-mode Gallium Nitride (eGaN®) FETs in 2009 and since that time has published five reliability reports, as well as a textbook covering the subject [1-6]. The first section of this paper reports on the qualification testing of EPC’s eGaN FETs under a wide variety of stress conditions. The test matrix covers the 40 V to 200 V eGaN FET families. The second section reports on the failure rate predictions using acceleration factors derived by operating devices well outside of normal operating conditions.

Rob Strittmatter Ph.D., Chunhua Zhou Ph.D., and Yanping Ma Ph.D., Efficient Power Conversion Corporation