EPC技術文章

Exploring the Frontiers of GaN Power Devices

Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.

Electronics Weekly
September, 2021
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應對用於超薄計算應用的超薄、具高功率密度的 48 V DC/DC 轉換器的電源和磁性設計挑戰

在過去十年中,計算機、顯示器、智能手機和其他消費電子系統變得更薄,同時功能也變得更强大。因此,市場對具有更高功率密度的更薄電源解决方案的需求不斷增加。本文研究了額定功率爲 250 W、超薄的48 V / 20 V轉換器,它可以採用各種非隔離型 DC/DC 降壓拓撲的可行性。我們研究了各種非隔離型拓撲的優缺點,從而瞭解拓撲如何影響功率電晶體和磁性元件的選擇,特別是電感器,因爲這兩個元件產生轉換器的大部分損耗。本文還詳細分析了爲這些應用設計薄型電感器所面對的挑戰,包括電感器損耗的因素、電感器尺寸和設計權衡,包括對EMI的影響。我們是以選擇、構建和測試了超薄多電平轉換器拓撲。從該轉換器獲得的實驗結果,用於進一步優化操作設置和元件的選擇,從而實現超過98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年9月
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採用 eGaN FET 的高效、高密度1/8 磚 1 kW LLC 諧振轉換器

隨著數據處理基礎設施的持續快速增長,市場要求在最小的佔板面積內提供更高的功率。

Power Systems Design
2021年9月
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爲甚麽採用 GaN 的馬達控制器更小、更快、更精準?

隨著採用氮化鎵(GaN)元件的應用越來越多,Bodo Arlt 借此機會與 EPC公司的首席執行長兼共同創辦人 Alex Lidow 談及他認爲這種不斷發展的技術的下一個重點市場。

Bodo’s Power Systems
2021 年 9 月
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Bodo 寬能隙專家演講 – 氮化鎵半導體專題 - 2021 年 6 月

由 Bodo Power Systems 主辦的氮化鎵行業專家圓桌會議的嘉賓包括:

  1. EPC公司的首席執行長兼共同創始人Alex Lidow
  2. Power Integrations公司的市場行銷與應用工程副總裁Doug Bailey
  3. Nexperia 公司的氮化鎵功率技術行銷戰略總監Dilder Chowdhury
  4. Navitas Semiconductor公司的市場行銷戰略高級總監Tom Ribarich

氮化鎵和 碳化矽元件的下一個浪潮

根據將氮化鎵和碳化矽材料的電子從價帶轉移到導帶所需的能量,氮化鎵和碳化矽元件被指定爲寬帶隙 (WBG) 半導體——碳化矽元件約爲 3.2 eV,氮化鎵元件則約爲 3.4 eV,而矽元件只有1.1 eV 。WBG 的擊穿電壓更高,在某些應用中可以達到 1,700 V。 在今年 5 月舉行的綫上PCIM Europe展會上,幾家公司展示了他們在 氮化鎵和碳化矽技術方面的最新創新,並且就 WBG 技術的發展方向分享了其獨特見解。

EE Times – Europe
2021 年 7 月
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Microchip 和 EPC 公司新推抗輻射場效應電晶體以抵抗輻射

航太應用的技術發展是 2021 年的重要組成部份,因此更多的抗輻射元件即將問世。 最近新推兩款新型場效應電晶體,它們給航太領域帶來了甚麽?

All About Circuits
2021 年 6 月
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用於以電池供電的馬達控制應用且基於氮化鎵元件的 1.5kW 逆變器

氮化鎵電晶體和積體電路提高了馬達控制應用的功率密度。最佳佈局允許從橋臂分流器或同相分流器獲得沒有振鈴噪聲的輸出開關波形和“乾淨“的電流重建信號。

Bodo’s Power Systems
2021 年 6 月
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Product roundup: GaN power semiconductors gain traction

(Image: Yole)

Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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於嚴峻情況下氮化鎵元件如何工作 – 將eGaN FET置於遠高於數據手冊的電壓和電流限值下工作

最近,EPC公司對其氮化鎵場效應電晶體(eGaN FET)進行了一系列測試,把它置於超出數據手冊的限值下工作,從而量化和發表這些元件通過電壓和電流極端應力測試的結果。

Bodo’s Power Systems
2021年5月
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Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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面向電池供電的馬達控制應用並基於氮化鎵ePower功率級積體電路的逆變器

氮化鎵電晶體和積體電路通過消除輸入濾波器中的電解電容,以提高馬達控制應用的功率密度。氮化鎵元件的卓越開關性能可消除死區時間且實現無與倫比的正弦電壓和電流波形,從而實現更平滑且沒有雜訊的操作。

Bodo’s Power Systems
2021年4月
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氮化鎵(GaN)積體電路重新定義功率轉換

氮化鎵技術發展迅速,在開發出多代全新離散元件後,具備更高效、更小尺寸和成本更低等優勢的新世代積體電路繼續崛起。氮化鎵積體電路讓產品可以更小型化、開關更快、更高效且更易於設計。

Power Systems Design
2021年3月 (第36-39頁)
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How GaN Integrated Circuits Are Redefining Power Conversion

Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
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Laser Driver IC Could Spur Burst Of Activity In Lidar Applications

New family of laser driver IC products will enable faster adoption and increased ubiquity of ToF solutions across a wider array of end-user applications.

How2Power
March, 2021
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Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Enhancement-mode gallium nitride (eGaN) FETs have demonstrated excellent thermomechanical reliability in actual operation in the field or when tested according to AEC or JEDEC standards. This is because of the inherent simplicity of the “package,” the lack of wire bonds, dissimilar materials, or mold compound. Recently, an extensive study of underfill products was conducted to experimentally generate lifetime predictions. A finite element analysis at the end of this section explains the experimental results and generates guidelines for selection of underfill based on key material properties.

Bodo's Power
March, 2021
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GaN Is Revolutionizing Motor Drive Applications

In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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GaN for High Density Servers

Gallium nitride (GaN) devices offer performance in a small form factor, increasing the efficiency, and reducing the system cost for 48 V power conversion applications. They have been adopted in high volumes in high density computing, as well as many new automotive power system designs.

Electronic Specifier
February, 2021
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Thermal Management of Chip-Scale GaN Devices

This article discusses the challenges that thermal management raises due to increase power density, especially with chip-scale packaging (CSP). What is sometimes overlooked, however, is that CSP eGaN® power FETs and integrated circuits have excellent thermal performance when mounted on standard printed circuit board (PCBs) with simple methods for attaching heat sinks. Simulations, supported by experimental verification, examine the effect of various parameters and heat flow paths to provide guidance on designing for performance versus cost.

Bodo’s Power Systems
February, 2021
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The 48 V Revolution: Why GaN Plus Digital Control for Ultra-thin Laptops

This article discusses how GaN-based solutions coupled with digital control increase efficiency, shrink the size, and reduce system costs for high density computing applications like ultra-thin laptops and high-end gaming systems. As computers, displays, smartphones and other consumer electronics systems become thinner and more powerful over the past decade, there is increasing demand for addressing the challenge of thinner solutions while extracting more power out of limited space. To address this challenge, the comparative advantages of various non-isolated DC-DC step-down topologies for ultra-thin 48 V – 20 V power solutions that are designed to fit inside a notebook computer or an ultra-thin display are examined.

Power Electronics News
January, 2021
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