In March, 2010 EPC introduced our first generation enhancement mode gallium nitride (eGaN® FETs). This initial product offering was RoHS non-compliant; containing lead in the device bump solder.
As part of our ongoing commitment to protecting the environment, EPC is pleased to offer lead-free, RoHS-compliant eGaN FETs.
Lead free eGaN FETs are in compliance with the RoHS Directive 2002/95/EC and the RoHS 3 Directive 2015/863. Directive 2002/95/EC bans the use of six specific hazardous substances in electric and electronic devices. The six substances are lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), and polybrominated diphenyl ethers (PBDE). Directive 2015/863 bans the use of four additional restricted substances (phthalates) to the original list of six, as cited under REACH legislation. The four additional substances are Bis(2-Ethylhexyl) phthalate (DEHP), Benzyl butyl phthalate (BBP), Dibutyl phthalate (DBP), and Diisobutyl phthalate (DIBP).
Lead free eGaN FETs are likewise in compliance with the RoHS Directive 2011/65/EU (RoHS 2). RoHS 2 deals with the same hazardous substances and the same maximum concentration limits as Directive 2002/95/EC (RoHS 1). Therefore, all products meeting the substance restrictions of RoHS 1 remain compliant to the substance restrictions of RoHS 2.
EPC’s lead-free product was also tested for halogen elements using the method in accordance with reference BS EN 14582:2007. None of the halogen elements were detected in the test.
Lead free devices are designated on their datasheets as such and are clearly identified with RoHS labels on the reels. For the full list of EPC’s eGaN FETs, please refer to our product listing at http://epc-co.com/epc/tw/產品/eGaNFET及集成電路.aspx
For more information please contact us at [email protected]
Yanping Ma, Ph.D.
Vice President, Quality
Efficient Power Conversion