EPC公司技術及產品專利權

宜普電源轉換公司(EPC)開發專有的增强型氮化鎵技術,使得其場效應電晶體及積體電路可於解決方案中廣泛地替代功率MOSFET 及LDMOS 元件。EPC公司擁有並將繼續申請其技術及產品組合的知識產權/智慧財產,包括於中國大陸、日本、韓國、臺灣及美國所取得的技術及產品專利權。

發證日期 國家/地區 專利號碼 專利名稱  
12/10/2021 Germany DE112017006120 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
09/17/2021 Korea 10-2306073 CURRENT PULSE GENERATOR WITH INTEGRATED BUS BOOST CIRCUIT
09/14/2021 US 11121245 FIELD PLATE STRUCTURES WITH PATTERNED SURFACE PASSIVATION LAYERS AND METHOD OF MANUFACTURING THEREOF
08/24/2021 US 11101349 LATERAL POWER DEVICE WITH REDUCED ON-RESISTANCE
07/01/2021 Taiwan I732280 CASCADED BOOT-STRAPPNG GaN POWER SWITCH AND DRIVER
06/29/2021 US 11050339 INTEGRATED CIRCUIT WITH MULTIPLE GALLIUM NITRIDE TRANSISTOR SETS
06/15/2021 US 11038503 GaN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
06/10/2021 Germany 112013006313 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
05/25/2021 US 11019718 LOW PARASITIC INDUCTANCE STRUCTURE FOR POWER SWITCHED CIRCUITS
04/30/2021 Korea 10-2249390 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
04/13/2021 China ZL01780073908.7 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
04/11/2021 Taiwan I724559 MULTI-CHANNEL PULSE CURRENT GENERATOR WITH CHARGING
03/30/2021 Korea 10-2236287 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
02/23/2021 US 10931244 COMMON GATE AMPLIFIER WITH HIGH ISOLATION FROM OUTPUT TO INPUT
02/16/2021 Japan 6839280 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
02/08/2021 Japan 6835581 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
01/26/2021 Korea 10-2210449 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
01/26/2021 US 10901011 MAGNETIC FIELD PULSE CURRENT SENSING FOR TIMING-SENSITIVE CIRCUITS
01/22/2021 China 201580056930.1 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
01/21/2021 Germany 112014003169.0 Isolation Structure in Gallium Nitride Devices and Integrated Circuits
01/21/2021 Taiwan I716980 GaN DRIVER USING ACTIVE PRE-DRIVER WITH FEEDBACK
01/13/2021 Korea 10-2204777 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
01/12/2021 US 10892650 MULTI-COIL LARGE AREA WIRELESS POWER SYSTEM
01/01/2021 Taiwan I715167 GaN BASED FAIL-SAFE SHUT-DOWN OF HIGH-CURRENT DRIVERS
01/01/2021 Taiwan I715249 LEVEL SHIFTER FOR HALF-BRIDGE GaN DRIVER APPLICATIONS
12/14/2020 Korea 10-2193085 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/14/2020 Korea 10-2193086 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
12/14/2020 Korea 10-2193087 GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
12/08/2020 US 10862337 LARGE AREA SCALABLE HIGHLY RESONANT WIRELESS POWER COIL
12/03/2020 Germany 112014003175B4 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/01/2020 Taiwan I684278 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHOD TO FABRICATE THE SAME
11/24/2020 US 10847947 GaN LASER DIODE DRIVE FET WITH GATE CURRENT REUSE
11/17/2020 US 10840742 WIRELESS POWER RECEIVER SYNCHRONIZATION DETECTION CIRCUIT
10/22/2020 Germany 11 2014 003 481 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
10/06/2020 US 10797601 CURRENT PULSE GENERATOR WITH INTEGRATED BUS BOOST CIRCUIT
09/29/2020 US 10790811 CASCADED BOOTSTRAPPNG GaN POWER SWITCH AND DRIVER
09/22/2020 US 10784794 GaN FET GATE DRIVER FOR SELF-OSCILLATING CONVERTERS
08/27/2020 Korea 10-2151200 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
08/25/2020 Korea 10-2150007 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHOD TO FABRICATE THE SAME
08/18/2020 US 10749514 GaN BASED ADJUSTABLE DRIVER CURRENT CIRCUIT
08/18/2020 US 10749514 GaN BASED ADJUSTABLE DRIVER CURRENT CIRCUIT
08/13/2020 Germany 11 2010 001 560.0 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
07/30/2020 Germany 102013202972.1 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
07/28/2020 US 10727834 LEVEL SHIFTER IN HALF BRIDGE GaN DRIVER APPLICATIONS
07/01/2020 Taiwan I698065 LARGE AREA SCALABLE HIGHLY RESONANT WIRELESS POWER COIL
06/09/2020 US 10680589 GAN BASED FAIL-SAFE SHUTDOWN OF HIGH-CURRENT DRIVERS
05/13/2020 Japan 6703983 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
05/06/2020 Korea 10-2109851 ENHANCEMENT MODE FET GATE DRIVER IC
04/28/2020 US 10637456 LOW VOLTAGE DROP CASCADED SYNCHRONOUS BOOTSTRAP SUPPLY CIRCUIT
04/14/2020 US 10622455 ENHANCEMENT-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
03/24/2020 US 10600674 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
03/24/2020 US 10601300 INTEGRATED GALLIUM NITRIDE BASED DC-DC CONVERTER
03/04/2020 Korea 10-2087283 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
12/11/2019 Taiwan I679687 E-MODE GaN TRANSISTOR WITH SELECTIVE AND NONSELECTIVE ETCH LAYERS FOR IMPROVED UNIFORMITY IN GaN SPACER THICKNESS
12/11/2019 Taiwan I679823 MULTI-COIL LARGE AREA WIRELESS POWER SYSTEM, AMPLIFIER CIRCUIT AND SYNCHRONIZATION CIRCUT
10/22/2019 US 10454472 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
09/11/2019 Taiwan I671907 LOW DISTORTION RF SWITCH
06/14/2019 China ZL201480020252.9 ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTERGRATED CIRCUITS
06/13/2019 Korea 10-1991036 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS
06/04/2019 US 10312131 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
06/04/2019 US 10312260 GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS
06/04/2019 US 10312335 GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
04/01/2019 Taiwan I655835 BOOTSTRAP CAPACITOR OVER-VOLTAGE MANAGEMENT CIRCUIT FOR GaN TRANSISTOR BASED POWER CONVERTERS
03/26/2019 US 10243546 ENHANCEMENT MODE FET GATE DRIVER IC
03/12/2019 US 10230341 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
03/01/2019 Japan 6486938 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
02/26/2019 US 10218353 LOW DISTORTION RF SWITCH
02/22/2019 Japan 6483116 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
02/22/2019 China ZL201480042237.4 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
01/22/2019 China ZL201480042752.2 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
11/11/2018 Taiwan I641218 ENHANCEMENT MODE FET GATE DRIVER IC
11/06/2018 China ZL201480020258.6 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
11/02/2018 China ZL201480043093.4 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
11/02/2018 China ZL201480049293.0 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
10/09/2018 US 10096702 MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATING SAME
10/02/2018 US 10090274 FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY
09/25/2018 US 10084445 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
08/31/2018 Japan 6393758 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
08/10/2018 Japan 6381639 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
07/21/2018 Taiwan I543368 ISOLATION STRUCTURE AND METHOD TO FABRICATE THE SAME IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
07/20/2018 Japan 6371309 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
06/15/2018 Japan 6351718 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
02/21/2018 Taiwan I615977 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
02/06/2018 US 9887677 HIGH EFFICENCY VOLTAGE MODE CLASS D TOPOLOGY
01/30/2018 China ZL201380068885.2 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
12/08/2017 Hong Kong 1188514 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
12/05/2017 US 9837438 GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS
12/01/2017 Taiwan I607626 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
08/29/2017 US 9748347 GATE WITH SELF-ALIGNED LEDGE FOR ENHANCEMENT MODE GaN TRANSISTORS
08/21/2017 Taiwan I596893 HIGH EFFICIENCY VOLTAGE MODE CLASS D TOPOLOGY
07/07/2017 Hong Kong HK1189427 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
05/30/2017 US 9667245 HIGH VOLTAGE ZERO QRR BOOTSTRAP SUPPLY
05/26/2017 Japan 6147018 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
04/25/2017 US 9634555 METHOD FOR OPERATING A NON-ISOLATED SWITCHING CONVERTER HAVING SYNCHRONOUS RECTIFICATION CAPABILITY SUITABLE FOR POWER FACTOR CORRECTION APPLICATIONS
03/28/2017 US 9607876 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
02/28/2017 US 9583480 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
02/21/2017 Taiwan I572037 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
01/18/2017 China ZL201310057366.8 ENHANCEMENT MODE GAN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
01/11/2017 Taiwan I566328 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
01/11/2017 Taiwan I566402 ENHANCEMENT MODE GaN HEMT DEVICE WITH A GATE SPACER AND METHOD FOR FABRICATING THE SAME
01/04/2017 Korea 10-1694883 BACK DIFFUSION SUPRESSION STRUCTURES
12/02/2016 Japan 6051168 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS
11/16/2016 China ZL201280005518.3 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GAN TRANSISTORS
11/01/2016 US 9484862 DEVICE AND METHOD FOR BIAS CONTROL OF CLASS A POWER RF AMPLIFIER
10/21/2016 Taiwan I555209 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
10/21/2016 Taiwan I555197 PARALLEL CONNECTION METHODS FOR HIGH PERFORMANCE TRANSISTORS
10/11/2016 Korea 10-1666910 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
09/22/2016 Korea 10-1660871 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
09/22/2016 Korea 10-1660870 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
09/21/2016 China ZL201180060404.4 SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION
08/01/2016 Taiwan I544606 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
06/11/2016 Taiwan I538208 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
05/09/2016 Korea 10-1620987 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
05/03/2016 US 9331061 PARALLEL CONNECTION METHODS FOR HIGH PERFORMANCE TRANSISTORS
05/03/2016 US 9331191 GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
03/11/2016 Taiwan I525765 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
02/11/2016 Taiwan I521641 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/21/2015 Taiwan I514567 BACK DIFFUSION SUPRESSION STRUCTURES
12/21/2015 Taiwan I514568 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATE THE SAME
12/15/2015 US 9214528 METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
12/15/2015 US 9214461 GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COMPONENTS
12/15/2015 US 9214399 INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR MAKING SAME
10/27/2015 US 9171911 ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
10/16/2015 Hong Kong HK1165614 DOPANT DIFFUSION MODULATION IN GAN BUFFER LAYERS
10/16/2015 Hong Kong HK1165616 BACK DIFFUSION SUPRESSION STRUCTURES
09/01/2015 Taiwan I499054 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/31/2015 Japan 2012-504807 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/31/2015 Japan 5785153 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
06/21/2015 Taiwan I489751 METHOD FOR OPERATING A NON-ISOLATED SWITCHING CONVERTER HAVING SYNCHRONOUS RECTIFICATION CAPABILITY SUITABLE FOR POWER FACTOR CORRECTION APPLICATIONS
05/19/2015 US 9035417 PARASITIC INDUCTANCE REDUCTION CIRCUIT BOARD LAYOUT DESIGNS FOR MULTILAYERED SEMICONDUCTOR DEVICES
04/22/2015 China 201080014928.5 DOPANT DIFFUSION MODULATION IN GAN BUFFER LAYERS
04/22/2015 China 201080015360.9 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
04/08/2015 China 201080015469.2 BACK DIFFUSION SUPRESSION STRUCTURES
03/03/2015 US 8969918 ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
02/06/2015 Japan 5689869 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
01/23/2015 Japan 5684230 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRONICALLY ISOLATED BACK SURFACE
12/26/2014 Japan 5670427 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
12/12/2014 Japan 5663000 BACK DIFFUSION SUPRESSION STRUCTURES
11/21/2014 Hong Kong 1165615 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
11/18/2014 US 8890168 ENHANCEMENT MODE GAN HEMT DEVICE
10/07/2014 US 8853749 ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
09/02/2014 US 8823012 ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME
07/30/2014 China ZL201080015425.X COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME
07/22/2014 US 8785974 BUMPED, SELF-ISOLATED GAN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE
05/07/2014 China ZL201080015388.2 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD FOR FABRICATING THE SAME
04/11/2014 Taiwan I434414 ENHANCEMENT MODE GALLIUM NITRIDE TRANSISTOR WITH IMPROVED GATE CHARACTERISTICS
09/21/2013 Taiwan I409859 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
05/07/2013 US 8436398 BACK DIFFUSION SUPRESSION STRUCTURES
04/30/2013 US 8431960 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS
03/26/2013 US 8404508 ENHANCEMENT MODE GAN HEMT DEVICE AND METHOD TO FABRICATING THE SAME
01/08/2013 US 8350294 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME