﻿<?xml version="1.0" encoding="utf-8"?><!--RSS Genrated: Sat, 04 Apr 2026 02:38:10 GMT--><rss version="2.0" xmlns:atom="http://www.w3.org/2005/Atom" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:content="http://purl.org/rss/1.0/modules/content/" xmlns:ev="http://purl.org/rss/1.0/modules/event/"><channel><title>Efficient Power Conversion Corporation - Articles</title><link>https://epc-co.com:443/epc/tw/關於宜普公司/活動及最新消息/新聞/ctl/rss/mid/1653/evl/0/categoryid/3/categoryname/技術文章</link><atom:link href="https://epc-co.com:443/epc/tw/關於宜普公司/活動及最新消息/新聞/ctl/rss/mid/1653/evl/0/categoryid/3/categoryname/技術文章" rel="self" type="application/rss+xml" /><description>RSS document</description><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[APEC 2026 | Microchip and EPC: Digital Control and GaN for Ultra-Compact Power Designs]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3285/apec-2026-%7c-microchip-and-epc-digital-control-and-gan-for-ultra-compact-power-designs</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3285/Microchip-Collab-APEC-26-News.png" length="118790"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3285/images/Microchip-Collab-APEC-26-News-333-250-p-L-97.png" alt="" /> In this video, Microchip and EPC showcase their latest advancements in high-efficiency power conversion for next-generation data centers and AI servers. Andreas Reiter, Senior Technical Applications ...]]></description><pubDate>Thu, 02 Apr 2026 13:44:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3285/apec-2026-%7c-microchip-and-epc-digital-control-and-gan-for-ultra-compact-power-designs</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3285]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[Understanding GaN Reliability: From Qualification to Wear-Out Modeling]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3284/understanding-gan-reliability-from-qualification-to-wear-out-modeling</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3284/shengke-apec-Thumbnail-news.png" length="132263"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3284/images/shengke-apec-Thumbnail-news-333-250-p-L-97.png" alt="" /> This presentation by Shengke Zhang, VP Reliability at EPC, addresses one of the most common questions in  GaN power device reliability : how manufacturers can confidently guarantee a 10-year ...]]></description><pubDate>Thu, 02 Apr 2026 13:21:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3284/understanding-gan-reliability-from-qualification-to-wear-out-modeling</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3284]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[APEC 2026：驚人功率密度：僅8毫米厚模組的6千瓦800伏至12伏轉換器]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3282/apec-2026%ef%bc%9a%e9%a9%9a%e4%ba%ba%e5%8a%9f%e7%8e%87%e5%af%86%e5%ba%a6%ef%bc%9a%e5%83%858%e6%af%ab%e7%b1%b3%e5%8e%9a%e6%a8%a1%e7%b5%84%e7%9a%846%e5%8d%83%e7%93%a6800%e4%bc%8f%e8%87%b312%e4%bc%8f%e8%bd%89%e6%8f%9b%e5%99%a8</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3282/Crazy-Power-Density.png" length="45648"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3282/images/Crazy-Power-Density-333-250-p-L-97.png" alt="" /> EPC 開發了一種新的轉換器，專為使用人工智能的「側車」伺服器設計，其中電源供應與資訊技術設備分開機架。此轉換器是一種固定比率轉換器，可以將 800 伏特降至 12 伏特。為了達到總輸出 6 kW，設計使用了多個 100 伏特至 12 伏特的模組，每個模組的額定功率為 750 W。這些單獨模組的輸入串聯在一起，而輸出則並聯連接。 

 整個 6 kW 模組具有緊湊的物理尺寸，尺寸為 106 ...]]></description><pubDate>Tue, 31 Mar 2026 21:00:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3282/apec-2026%ef%bc%9a%e9%a9%9a%e4%ba%ba%e5%8a%9f%e7%8e%87%e5%af%86%e5%ba%a6%ef%bc%9a%e5%83%858%e6%af%ab%e7%b1%b3%e5%8e%9a%e6%a8%a1%e7%b5%84%e7%9a%846%e5%8d%83%e7%93%a6800%e4%bc%8f%e8%87%b312%e4%bc%8f%e8%bd%89%e6%8f%9b%e5%99%a8</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3282]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[APEC 2026 | 高密度馬達驅動器：僅使用馬達頂部散熱片的小型氮化鎵板輸出15A]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3281/apec-2026-%7c-%e9%ab%98%e5%af%86%e5%ba%a6%e9%a6%ac%e9%81%94%e9%a9%85%e5%8b%95%e5%99%a8%ef%bc%9a%e5%83%85%e4%bd%bf%e7%94%a8%e9%a6%ac%e9%81%94%e9%a0%82%e9%83%a8%e6%95%a3%e7%86%b1%e7%89%87%e7%9a%84%e5%b0%8f%e5%9e%8b%e6%b0%ae%e5%8c%96%e9%8e%b5%e6%9d%bf%e8%bc%b8%e5%87%ba15a</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3281/High-Density-Motor-Drives.jpg" length="283253"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3281/images/High-Density-Motor-Drives-333-250-p-L-97.jpg" alt="" /> EPC 展示了 EPC 91122 板，該板配備了 EPC 3111 模組，一個 100 伏特的三相模組，專為電機控制應用設計。 

 該板整合了控制器、電源模組、兩個電流感測器和一個位置感測器。由於鎵氮化物 (GaN) 技術支持在 100 kHz 的切換頻率，設計完全依賴 MLCC 電容器，徹底省去了體積較大的電解電容器的需求。 

  觀看影片  ]]></description><pubDate>Mon, 30 Mar 2026 22:31:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3281/apec-2026-%7c-%e9%ab%98%e5%af%86%e5%ba%a6%e9%a6%ac%e9%81%94%e9%a9%85%e5%8b%95%e5%99%a8%ef%bc%9a%e5%83%85%e4%bd%bf%e7%94%a8%e9%a6%ac%e9%81%94%e9%a0%82%e9%83%a8%e6%95%a3%e7%86%b1%e7%89%87%e7%9a%84%e5%b0%8f%e5%9e%8b%e6%b0%ae%e5%8c%96%e9%8e%b5%e6%9d%bf%e8%bc%b8%e5%87%ba15a</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3281]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[APEC 2026：以氮化鎵實現端到端]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3280/apec-2026%ef%bc%9a%e4%bb%a5%e6%b0%ae%e5%8c%96%e9%8e%b5%e5%af%a6%e7%8f%be%e7%ab%af%e5%88%b0%e7%ab%af</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3280/end-to-end-with-gan.png" length="121844"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3280/images/end-to-end-with-gan-333-250-p-L-97.png" alt="" /> 在這場網絡研討會中，高效能功率轉換（EPC）的首席執行官Alex ...]]></description><pubDate>Mon, 30 Mar 2026 21:27:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3280/apec-2026%ef%bc%9a%e4%bb%a5%e6%b0%ae%e5%8c%96%e9%8e%b5%e5%af%a6%e7%8f%be%e7%ab%af%e5%88%b0%e7%ab%af</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3280]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[GaN fundamentals: 2DEG, crystal structure, and figure of merit]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3279/gan-fundamentals-2deg-crystal-structure-and-figure-of-merit</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3279/GaN-Fundamentals---2DEG-blog-image.png" length="199093"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3279/images/GaN-Fundamentals---2DEG-blog-image-333-250-p-L-97.png" alt="" /> Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...]]></description><pubDate>Thu, 26 Mar 2026 23:16:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3279/gan-fundamentals-2deg-crystal-structure-and-figure-of-merit</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3279]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[並聯 GaN FETs：電流共享的挑戰與解決方案]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3277/%e4%b8%a6%e8%81%af-gan-fets%ef%bc%9a%e9%9b%bb%e6%b5%81%e5%85%b1%e4%ba%ab%e7%9a%84%e6%8c%91%e6%88%b0%e8%88%87%e8%a7%a3%e6%b1%ba%e6%96%b9%e6%a1%88</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3277/paralleling-gaN-FET.png" length="116577"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3277/images/paralleling-gaN-FET-333-250-p-L-97.png" alt="" /> 電力電子學中最古老的挑戰之一是將多個晶體管並聯，以獲得更高電流的開關。這項任務很少是簡單的，因為兩個或更多的晶體管從來不會表現出完全相同的電氣參數，這阻止了電流的均勻分配。 

 對於早期的功率轉換器設計者來說，這項壇業更加艱難，因為當時可用的元件是電流驅動的雙極性接面晶體管（BJTs）。這意味著無法利用內在的穩定效應來幫助實現均勻的電流共享。事實上，所需的基極-射極電壓（V BE ...]]></description><pubDate>Wed, 25 Mar 2026 13:36:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3277/%e4%b8%a6%e8%81%af-gan-fets%ef%bc%9a%e9%9b%bb%e6%b5%81%e5%85%b1%e4%ba%ab%e7%9a%84%e6%8c%91%e6%88%b0%e8%88%87%e8%a7%a3%e6%b1%ba%e6%96%b9%e6%a1%88</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3277]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[EEVblog 1737 - Alex Lidow：功率MOSFET的發明者]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3270/eevblog-1737-alex-lidow%ef%bc%9a%e5%8a%9f%e7%8e%87mosfet%e7%9a%84%e7%99%bc%e6%98%8e%e8%80%85</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3270/Inventor-of-the-Power-MOSFET.png" length="109549"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3270/images/Inventor-of-the-Power-MOSFET-333-250-p-L-97.png" alt="" /> 在這段影片中，您將看到與Alex Lidow的對話 - 他在國際整流器公司期間發明了原始的功率MOSFET和HEXFET。Alex後來成為了他父親創立公司的CEO，今天是高效能功率轉換（EPC）的創始人兼CEO，該公司以生產市場上一些最高效的 GaN FETs 而聞名。在討論中，您將聽到功率MOSFET是如何在Alex工作的第一天被發明的故事，以及這一突破是如何塑造現代功率電子技術的。 ...]]></description><pubDate>Fri, 06 Mar 2026 22:11:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3270/eevblog-1737-alex-lidow%ef%bc%9a%e5%8a%9f%e7%8e%87mosfet%e7%9a%84%e7%99%bc%e6%98%8e%e8%80%85</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3270]]></dc:identifier></item><item><dc:creator><![CDATA[Phil-Muze]]></dc:creator><title><![CDATA[並聯 GaN FET 中的瞬態電流共享：寄生電容的作用]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3267/%e4%b8%a6%e8%81%af-gan-fet-%e4%b8%ad%e7%9a%84%e7%9e%ac%e6%85%8b%e9%9b%bb%e6%b5%81%e5%85%b1%e4%ba%ab%ef%bc%9a%e5%af%84%e7%94%9f%e9%9b%bb%e5%ae%b9%e7%9a%84%e4%bd%9c%e7%94%a8</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3267/test-board-for-GaN-FET.jpg" length="32448"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3267/images/test-board-for-GaN-FET-333-250-p-L-97.jpg" alt="" /> 本文探討了寄生電容對鎵氮化物(GaN)場效應晶體管(FETs)在並聯配置中動態電流共享行為的影響。隨著GaN技術在高性能電力電子系統中的持續崛起，並聯多個裝置已成為增加電流處理能力的常見策略。 
 Salvatore Musumeci 博士, Vincenzo Barba 博士, Michele Pastorelli 教授, Marco Palma 碩士  
 ScienceDirect  ...]]></description><pubDate>Wed, 04 Mar 2026 16:25:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3267/%e4%b8%a6%e8%81%af-gan-fet-%e4%b8%ad%e7%9a%84%e7%9e%ac%e6%85%8b%e9%9b%bb%e6%b5%81%e5%85%b1%e4%ba%ab%ef%bc%9a%e5%af%84%e7%94%9f%e9%9b%bb%e5%ae%b9%e7%9a%84%e4%bd%9c%e7%94%a8</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3267]]></dc:identifier></item><item><dc:creator><![CDATA[SuperUser-Account]]></dc:creator><title><![CDATA[在 800 V 架構的 AI 伺服器中，於 ISOP 轉換器中使用低壓 GaN]]></title><link>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3266/%e5%9c%a8-800-v-%e6%9e%b6%e6%a7%8b%e7%9a%84-ai-%e4%bc%ba%e6%9c%8d%e5%99%a8%e4%b8%ad%ef%bc%8c%e6%96%bc-isop-%e8%bd%89%e6%8f%9b%e5%99%a8%e4%b8%ad%e4%bd%bf%e7%94%a8%e4%bd%8e%e5%a3%93-gan</link><enclosure type="image/jpg" url="https://epc-co.com/epc/Portals/0/EasyDNNNews/3266/Using-low-voltage-GaN-.png" length="38426"></enclosure><description><![CDATA[<img src="https://epc-co.com/epc/Portals/0/EasyDNNNews/3266/images/Using-low-voltage-GaN--333-250-p-L-97.png" alt="" /> 在過去十年中，AI 工作負載一直依賴於並非為其快速成長的功率需求而設計的伺服器架構。近年來，「AI 工廠」的概念逐漸興起，將資料中心重新定義為以生產力為導向、並針對高運算密度進行最佳化的系統。   Bodo’s Power Systems  2026 年 3 月   閱讀 Alejandro Pozo 和 Michael De Rooij 的文章  ]]></description><pubDate>Tue, 03 Mar 2026 17:48:00 GMT</pubDate><guid>https://epc-co.com/epc/tw/關於宜普公司/活動及最新消息/新聞/artmid/1653/articleid/3266/%e5%9c%a8-800-v-%e6%9e%b6%e6%a7%8b%e7%9a%84-ai-%e4%bc%ba%e6%9c%8d%e5%99%a8%e4%b8%ad%ef%bc%8c%e6%96%bc-isop-%e8%bd%89%e6%8f%9b%e5%99%a8%e4%b8%ad%e4%bd%bf%e7%94%a8%e4%bd%8e%e5%a3%93-gan</guid><dc:identifier><![CDATA[e9a7f1ee-a055-43e0-ac5c-028acda92f08-3266]]></dc:identifier></item></channel></rss>