部落格:氮化鎵技術如何擊敗矽技術
Term: シリコン
1 post(s) found

New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.

New 200 V eGaN Devices Double the Performance Edge Over the Aging Silicon Power MOSFET.
八月 21 2020

Efficient Power Conversion (EPC) is doubling the performance distance between the aging silicon power MOSFET and eGaN® transistors with 200 V ratings.  The new fifth-generation devices are about half the size of the prior generation.  This performance boost comes from two main design differences, as shown in figure 1.  On the left is a cross-section of the fourth generation 200 V enhancement-mode GaN-on-Si process.  The cross-section on the right is the fifth-generation structure with reduced distance between gate and source electrodes and an added thick metal layer. These improvements, plus many others not shown, have doubled the performance of the new-generation FETs.