The latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion. The EPC2045, shown in figure 1, is rated at 100 V with 7 mΩ on- resistance that can carry a continuous current of 16 A. The EPC2045 is nearly one-tenth the footprint of a comparable Si MOSFET and has lower parasitic capacitances and can switch much faster than equivalent silicon devices, yielding lower switching loss even at higher switching frequency.
The EPC2053, shown in figure 2, is rated at 100 V with 4 mΩ on-resistance that can carry a continuous current of 32 A. The EPC2053 has lower parasitic capacitances and on-resistance than its silicon counterparts, yielding faster switching speed and lower power losses even at higher switching frequencies. These characteristics enable increasing the output power while shrinking the volume of the converter.