EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

This device joins the EPC2045 (7 mΩ, 100 V), EPC2052 (13.5 mΩ, 100 V) and EPC2051 (25 mΩ, 100 V) to offer designers a comprehensive family of 100 V products suitable for a wide-range of power levels and price points to meet the increasing demands of 48 V server, 48 V automotive, and 54 V data center applications. Other applications for the 100 V family include single-stage 48 V to load open rack server architectures, USB-C, precision motor drives, LED lighting, and lidar. 

100 V eGaN FET family for best-in-class 48 V DC-DC

This latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion.