Next-Generation GaN Technology Doubles Power Density Posted 2022年11月15日 In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same RDS(on) as previous generation devices in die that are half the size. How2Power November, 2022 Read article 相關的熱門文章 GaN-Based Low-Voltage Inverter for Electric Scooter Drive System PCB Power Loop Layout for Chip-scale Package GaN FETs Optimizes Electrical and Thermal Performance CES 2022: GaN Technology for the Next Future GaN Devices for Smaller, Lighter, Smoother Motor Drives Microchip 和 EPC 公司新推抗輻射場效應電晶體以抵抗輻射