D類音頻放大器參考設計(EPC9192)讓模組化設計具有高功率和高效，從而可實現客制化、高性能的電路設計。

宜普電源轉換公司(EPC)宣布推出EPC9192參考設計，可實現優越、緊凑型和高效的D類音頻放大器，于接地參考、分離式雙電源單端(SE)設計中發揮200 V eGaN FET元件(EPC2307 )的優勢，在4Ω負載下，每聲道輸出功率達700 W。

我們目前人員均安，廠務狀況檢查正常。各設施經過徹底檢查，可安全地持續營運，生產沒有中斷。供應鏈也已經過評估，沒有受到影響。

如果您有任何問題或疑慮，請隨時聯絡您當地的 EPC銷售代表。

根据国家知识产权局官网20204年4月2日的消息，宜普电源转换公司（Efficient Power Conversion Corporation, EPC，以下简称宜普公司）一件名为“增强型GaN高电子迁移率晶体管器件及其制备方法”的专利(专利号ZL201080015388.2)的核心权利要求6、9、10、13、14、17、18、22-26在无效程序（案件编号：4W116775）中被维持有效。该件专利的无效请求人是英诺赛科（苏州）科技有限公司（以下简称英诺赛科公司）。

According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).

Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
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基於氮化鎵元件的逆變器參考設計(EPC9193)讓您實現具有更高性能的馬達系統，其續航里程更長、精度更高、扭矩更大，而且同時降低了系統的總成本。

宜普電源轉換公司（EPC）推出 EPC9193，它是使用EPC2619 eGaN^® FET的三相BLDC馬達驅動逆變器，具有14 V~65 V的寬輸入直流電壓範圍和兩種配置，分別為標準和大電流版本：

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

EPC推出採用緊凑型QFN封裝( 3 mm x 5 mm)的100 V、1 mOhm GaN FET (EPC2361)，助力DC/DC轉換、快充、馬達控制和太陽能 MPPT等應用實現更高的功率密度。

2024 年 2 月27日 — 全球增强型氮化鎵 (GaN) 功率 FET 和 IC領域的領導者宜普電源轉換公司（EPC）推出 100 V、1 mOhm （EPC2361）。 這是市場上具有最低導通電阻的 GaN FET，與 EPC 的上一代産品相比，功率密度提高了一倍。

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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EPC GaN FET與Analog Devices驅動器和控制器相結合，為客戶簡化氮化鎵基設計、提高其效率、降低散熱成本、助力運算、工業和消費類應用的DC/DC轉換器實現最高功率密度。

宜普電源轉換公司（EPC ）宣佈推出採用EPC GaN FET和Analog Devices, Inc.(ADI)控制器的各種参考設計。

In this episode of PowerUP featuring Alex Lidow, CEO of EPC, we delve into an examination of the revolutionary implications of GaN technology across a range of applications, with a specific focus on motor control and LiDAR systems.

Power Electronics News
February, 2024
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宜普電源轉換公司（EPC）推出三款雷射驅動器電路板，這些板採用了符合AEC-Q101認證標準、快速轉換的GaN FET以實現具備卓越性能的光達系統。

EPC推出三款評估板，分別是EPC9179、EPC9181和EPC9180，它採用75 A、125 A、231 A脉衝電流雷射驅動器和通過車規級AEC-Q101認證的EPC GaN FET - EPC2252、EPC2204A 和EPC2218A。它比前代氮化鎵元件的體積小30%和更具成本效益。這些電路板專為長距離和短距離車載光達系統而設計，通過可選的輸入和輸出值，加快評估氮化鎵基解決方案。

EPC公司的氮化鎵專家將在國際消費電子展(CES)上分享氮化鎵技術如何增强消費電子產品的功能和性能

增强型氮化鎵(eGaN^®)FET和IC領域的全球領導者宜普電源轉換公司(EPC)將在CES 2024展會展示其卓越的氮化鎵技術如何為消費電子產品在功能和性能方面做出貢獻 ，包括實現更高效率、更小尺寸和更低成本的解決方案。

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
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Efficient Energy Technology GmbH(EET)位於奧地利，是設計和生產創新、用於陽臺的小型發電廠的先驅。EET公司選用了宜普電源轉換公司(EPC)的增强型氮化鎵(eGaN^®)功率電晶體（EPC2204）, 用於其新型SolMate^®綠色太陽能陽臺產品。EPC2204在低R_DS(on)和低C_OSS之間實現了最佳折衷，這對於要求嚴格的硬開關應用至關重要，同時在緊凑的封裝中實現100 V的汲-源擊穿電壓。這種緊凑型設計顯著縮小了PCB的尺寸，保持較小的電流廻路和最大限度地減少EMI。

EET公司結合了EPC的氮化鎵元件和其SolMate MPPT充電轉換器，以實現多種優勢：效率損失半和整體效率從96%提高到98%。轉換器的體積縮減了70%、BOM和製造成本降低了 20%，而且同時降低了對散熱的要求。此外，由於開關頻率提高了10倍，因此無需使用易於引發問題的電解電容器，從而延長了轉換器的使用壽命。

與採用傳統矽元件的轉換器相比，採用氮化鎵基高電子遷移率電晶體 (HEMT) 具有許多材料和性能優勢，已廣泛用於消費和工業用功率轉換領域。氮化鎵元件在更高的開關頻率下提高了功率轉換效率，進而實現更低的系統成本和更高的功率密度。隨著功率密度的增加，散熱分析和熱建模變得至關重要。我們將在本文分享EPC的熱量計算器。 EPC公司製造增强型 GaN HEMT 和集成電路，例如支持多種轉換器的半橋元件。

Power Electronics News
2023年11月
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Space exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior radiation tolerance and unmatched electrical performance compared to traditional silicon MOSFETs. In this article, we delve into the reasons why GaN power devices are the ultimate choice for power conversion applications in space and how their resistance to radiation makes them an extremely robust solution for space missions.

Components in Electronics
October 2023
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LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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基於氮化鎵元件的EPC9194逆变器参考設計顯着提高了馬達控制系統的效率、扭矩而同时使得單位重量功率（比功率）增加了一倍以上。該逆变器非常微型，可整合到電機外殼中，從而實現最低的電磁干擾、最高的密度和最輕的重量。

宜普電源轉換公司宣佈推出三相BLDC馬達控制逆變器參考設計(EPC9194)。它的工作輸入電源電壓範圍為14V~60V，可提供高達60 A_pk(40 A_RMS)的輸出電流。此電壓範圍和功率使該解決方案非常適合用於各種三相BLDC馬達控制器，包括電動自行車、電動滑板車、無人機、機器人和直流伺服馬達。

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

EE Times Europe
October 2023
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