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EPC新推基於GaN FET的150 ARMS馬達控制器参考設計, 用於智慧出行、叉車和大功率無人機

EPC新推基於GaN FET的150 ARMS馬達控制器参考設計, 用於智慧出行、叉車和大功率無人機

基於氮化鎵元件的EPC9186逆变器参考設計增强了高功率應用的電機系统性能、精度、扭矩扭矩和可實現更長的續航里程。

宜普電源轉換公司(EPC)新推EPC9186,這是一款採用EPC2302 eGaN®FET的三相BLDC馬達控制逆变器。EPC9186支持14 V~ 80 V的輸入直流電壓。大功率EPC9186支持電動滑板車、小型電動汽車、農業機械、叉車和大功率無人機等應用。

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Test-to-Fail Methodology for Accurate Reliability and Lifetime Evaluation of eGaN Devices in Solar Applications

Test-to-Fail Methodology for Accurate Reliability and Lifetime Evaluation of eGaN Devices in Solar Applications

Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and panels with built-in microinverters are becoming the prevailing trend for an increasing number of solar customers, where low voltage GaN power devices (VDS < 200 V) are extensively used.

Bodo’s Power Systems
May, 2023
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Growing GaN Ecosystem for BLDC Motor Drives

Growing GaN Ecosystem for BLDC Motor Drives

Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The superior switching capability of GaN helps to remove dead time and increase PWM frequency to obtain unmatched sinusoidal voltage and current waveforms for smoother, silent operation with higher system efficiency

Power Systems Design
May, 2023
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EPC GaN FET配以ADI控制器可實現最高功率密度穩壓DC/DC轉換器

EPC GaN FET配以ADI控制器可實現最高功率密度穩壓DC/DC轉換器

宜普電源轉換公司(EPC)和Analog Devices(ADI)公司携手新推的参考設計採用經過全面优化的新型模擬控制器来驅動EPC的氮化鎵場效應電晶體,可實現超過96.5%的效率。

宜普電源轉換公司(EPC)宣佈新推EPC9158,這是一款工作在500 kHz開關頻率的雙輸出同步降壓轉換器参考设计,可將48 V~54 V的輸入電壓轉換為12 V穩壓輸出,可提供高達每相25 A電流或50 A總連續電流。ADI的新型LTC7890同步氮化鎵降壓控制器与EPC的超高效GaN FET相结合,可為高功率密度應用提供佔板面積小且非常高效的解決方案。該解決方案在48 V/12 V 、50 A連續電流下可實現 96.5%的效率。

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EPC GaN Experts to Showcase Latest Generation Power Semiconductors at PCIM Europe 2023

EPC GaN Experts to Showcase Latest Generation Power Semiconductors at PCIM Europe 2023

EPC’s GaN Experts will be available during PCIM Europe 2023, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — April 2023 — — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations on GaN technology and showcasing applications at PCIM Europe 2023 in Nuremburg, 09 – 11 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 318.

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The EEcosystem Podcast: Dr. Alex Lidow: The Mind behind Power MOSFET and the Rise of GaN

The EEcosystem Podcast: Dr. Alex Lidow: The Mind behind Power MOSFET and the Rise of GaN

In this episode of The EEcosystem Podcast, our guest is Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion. In this episode, we will find out more about Alex and learn about MOSFETs and the rise of GaN. How did MOSFETs grow so quickly? What technologies are driving GaN adoptions and why. We will also discuss the potential obstacles to GaN adoption. This and many more questions will be answered as we go along! Listen to this episode to learn more!

April, 2023
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How to Integrate GaN Power Stages for Efficient Battery-Powered BLDC Motor Propulsion Systems

How to Integrate GaN Power Stages for Efficient Battery-Powered BLDC Motor Propulsion Systems

This article discusses the advantages of GaN-based power stages and introduces a sample device from EPC, implemented in a half-bridge topology. It explains how to use associated development kits to quickly get started on a project. In the process, designers will learn how to measure the parameters of a BLDC motor and operate it in sensorless field orientation control (FOC) with minimal programming effort using Microchip Technology’s motorBench Development Suite.

Digi-Key Electronics
April, 2023
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GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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EPC第十五階段產品可靠性測試報告 根據實際應用經驗,預測氮化鎵元件壽命

EPC第十五階段產品可靠性測試報告 根據實際應用經驗,預測氮化鎵元件壽命

宜普電源轉換公司(EPC)發佈第十五階段產品可靠性測試報告,進一步豐富了關於氮化鎵元件可靠性的知識庫和展示了 EPC eGaN 產品的穩健耐用性已在實際應用中得到驗證。

EPC 宣佈發佈其第十五階段產品可靠性測試報告,記錄了持續使用測試元件至失效的方法,並針對太陽能優化器光達感測器DC/DC 轉換器等實際應用,加入了具體的可靠性指標和預測數據。

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Power Steering with GaN ePower™ ICs

Power Steering with GaN ePower™ ICs

With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.

Power Electronics News
March, 2023
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Sharge Selects GaN FETs from EPC for High-power USB PD Charger

Sharge Selects GaN FETs from EPC for High-power USB PD Charger

EL SEGUNDO, Calif.—  March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.

EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.

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Power Packaging for the GaN Generation of Power Conversion

Power Packaging for the GaN Generation of Power Conversion

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
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GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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歡迎蒞臨APEC 2023展覽會與GaN專家會面 以瞭解最新一代功率半導體如何針對各業界需求,實現最佳功率密度

歡迎蒞臨APEC 2023展覽會與GaN專家會面 以瞭解最新一代功率半導體如何針對各業界需求,實現最佳功率密度

EPC的GaN專家將在其APEC展位展示各種應用所採用的最新一代GaN FET 和 IC。

宜普電源轉換公司(EPC)是增强型氮化鎵FET和IC領域的全球領導者,將於3月19日至23日在奧蘭多舉行的IEEE APEC 2023會議上發表多項技術演講,詳情請參閱下方時間表。此外,我們還會在奧蘭治縣會議中心的732號展位展示最新一代的 eGaN®FET和IC,其應用範圍包括高功率密度計算電動汽車機器人太陽能、電池充電等。歡迎蒞臨參觀“GaN之牆”,我們提供市場上最廣泛的氮化鎵功率半導體產品組合,可現成交付。

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面向USB PD 3.1應用,EPC新推基於eGaN IC的 高功率密度、薄型DC/DC轉換器參考設計

面向USB PD 3.1應用,EPC新推基於eGaN IC的 高功率密度、薄型DC/DC轉換器參考設計

EPC推出EPC9177,這是一種基於eGaN®IC的高功率密度、薄型DC/DC轉換器參考設計,可滿足新型USB PD 3.1對多端口充電器和主板上從28V~48V輸入電壓轉換至12 V或20 V輸出電壓的嚴格要求。

宜普電源轉換公司(EPC)宣佈推出EPC9177,這是一款數位控制、單輸出同步降壓轉換器参考設計,工作在 720 kHz開關頻率,可轉換 48 V、36 V、28 V至稳壓12 V 輸出電壓,並提供可高達20 A的連續輸出電流。

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EPC Presents Sixth eGaN Generation

EPC Presents Sixth eGaN Generation

Five times smaller than an equivalent silicon MOSFET and twice as powerful as the previous generation of eGaN devices is the new sixth generation of devices introduced by Efficient Power Conversion (EPC). We asked CEO Alex Lidow in the video.

Electroniknet.de
November 29, 2022
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EPC新推200 V、10 mΩ、採用QFN封裝的GaN FET, 實現高效靈活設計

EPC新推200 V、10 mΩ、採用QFN封裝的GaN FET, 實現高效靈活設計

宜普電源轉換公司(EPC)推出200 V、10 mΩ的EPC2307,完善了額定電壓為 100 V、150 V和200 V的6個GaN電晶體系列,提供更高的性能、更小的解決方案和易於設計的DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器,以及馬達控制器。

全球增强型氮化鎵FET和IC領導者EPC推出 200 V、10 mΩ的EPC2307,採用耐熱增强型QFN封裝,佔位面積僅為3 mm x 5 mm。

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