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EPC公司爲電源系統設計工程師提供全新的100 V、23 mΩ 功率電晶體（EPC2070），它採用微型芯片級封裝並提供34 Ａ脉衝電流，非常適合 60 W、48 V 電源轉換器、光達和 LED 照明等應用。
宜普電源轉換公司(EPC)宣佈推出100 V的氮化鎵電晶體（EPC2070），具有23 mΩ 的最大導通阻抗和34 A脉衝輸出電流，可在細小的1.1 mm2佔板面積實現高效功率轉換。
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The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.
EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN® FET
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November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.
The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.
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EPC9163是一款兩相48 V/12 V雙向轉換器，可提供2 kW的功率和實現96.5%的效率，是適用於輕度混合動力汽車和備用電池裝置的小型化解決方案。
宜普電源轉換公司（EPC）宣佈推出EPC9163，這是一款 2 kW、兩相的48 V /12 V雙向轉換器演示板，可在非常小的佔板面積上實現96.5%的效率。該演示板的設計具有可擴展性 – 並聯兩個轉換器可以實現4 kW的功率，或者並聯三個轉換器以實現6 kW。該板採用8個100 V 的eGaN® FET（EPC2218），並由模塊控制，該模塊採用Microchip公司的dsPIC33CK256MP503 16位數位控制器。
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EPC推出了40 V、1.3 mΩ的氮化鎵場效應電晶體 （eGaN® FET），元件型號爲EPC2067，專爲設計人員而設。EPC2067比MOSFET更小、更高效、更可靠，適用於高性能且空間受限的應用。
宜普電源轉換公司（EPC）是增强型矽基氮化鎵功率電晶體和積體電路的全球領導者。新推的EPC2067（典型值爲 1.3 mΩ、40 V）擴大了可選的低壓元件，可立即供貨。
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50 W、12 V/60 V且基於eGaN® FET的同步升壓轉換器採用簡單、低成本的拓樸結構，可實現 95.3%的峰值效率和低温升。
宜普電源轉換公司（EPC）宣佈推出雙向降壓或反向升壓轉換器演示板（EPC9162）。該演示板用於同步轉換器時採用100 V的EPC2052元件，以及用於同步自舉FET電路時，採用EPC2038元件。
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GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.
EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications.
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EL SEGUNDO, Calif. — September 2021 — Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase the total power efficiency by 5%.
The EPC2059 is a 6.8 mΩ, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for high-end amplifier applications. The low on resistance and low capacitance of the EPC2059 enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).
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EPC 推出了 40 V、1.6 mΩ的氮化鎵場效應電晶體 （eGaN®FET），元件型號為EPC2069，專爲設計人員而設，EPC2069比目前市場上可選的元件更小、更高效、更可靠，適用於高性能且空間受限的應用。
宜普電源轉換公司（EPC）是增强型矽基氮化鎵 (eGaN)功率電晶體和集成電路的全球領導者。新推的EPC2069（典型值爲 1.6 mΩ、40 V）是更高性能的低壓元件，可立即供貨。
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這些新一代氮化鎵場效應電晶體(eGaN FET) 滿足了目前電動出行（eMobility）、交付和物流機器人，以及無人機市場所需的緊凑型 BLDC 電機驅動器和具成本效益、高解析度的飛行時間（ToF）的新需求。
宜普電源轉換公司（EPC）是增强型矽基氮化鎵 (eGaN) 功率電晶體和積體電路的全球領導者。新推的EPC2065 和 EPC2054具備更高的性能和更低的成本等優勢。
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Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.
EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.
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宜普電源轉換公司(EPC) 的氮化鎵專家將在APEC展示最新的增强型氮化鎵場效應電晶體和積體電路的發展，並探討氮化鎵技術的卓越性能如何改變了具高功率密度的運算、車用、電動運輸和機器人等應用的電源供電。
EPC團隊將在6月14日至17 日舉行的APEC虛擬會議暨博覽會上，進行多個關於氮化鎵 (GaN) 技術和應用的技術演示和網絡研討會，並且提供相關的教育教程。此外，EPC公司也參加了此次活動的虛擬展覽，展示出其客戶的終端產品中採用了最新的 eGaN FET和積體電路，從而推動了氮化鎵（eGaN）技術的普及。
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宜普電源轉換公司（EPC）宣佈推出新型EPC9149演示板。該板爲一款可提供1 kW功率的48 V输入、12 V输出的LLC轉換器，可作爲直流變壓器，轉換比爲4：1。EPC9149採用額定電壓爲100 V的EPC2218氮化鎵場效應電晶體（eGaN FET）和額定電壓爲40 V的EPC2024 。
EPC9149的尺寸是根據DOSA標準的1/8磚型，僅爲58.4 mm x 22.9 mm。輸出功率是1 kW時，EPC9149比基於硅元件的解決方案要小得多，後者的尺寸通常是1/4磚或大兩倍。不帶散熱器的轉換器的總厚度僅爲10 mm。爲了讓工程師能够輕鬆地複製這個设计，該電路板的所有設計資源，包括原理圖、物料清單和Gerber文件，都可以在EPC網站上找到。
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EPC9137是一款兩相是48 V/12 V雙向轉換器，以小型化解决方案提供1.5 kW功率，效率爲97%，適用於輕混電動車和電池電源備用裝置。
宜普電源轉換公司（EPC）宣佈推出EPC9137，這是一款1.5 kW的兩相48 V/12 V雙向轉換器，占板面積小，效率爲97%。 該演示板的設計是可擴展的 – 並聯兩個轉換器可實現3 kW，或者並聯3個轉換器可實現4.5 kW。該板使用4個100 V的eGaN®FET（EPC2206）,幷且由一個包括Microchip dsPIC33CK256MP503 16位數字控制器的模組控制。
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EPC9146演示板展示EPC2152 ePower™功率級使能高性能且低成本的BLDC馬達, 從而實現具有更高的性能和更小型化的解決方案。
宜普電源轉換公司（EPC）宣佈推出400 W馬達控制器演示板(EPC9146)，包含三個獨立控制的半橋電路，採用集成了閘極驅動器的單片式EPC2152ePower™功率級，其最大電壓為80 V和最大輸出電流為15 A（10 ARMS）。板的尺寸僅為81 mm x 75 mm，在輸出功率為400 W時，可實現超過98.4％的效率。
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Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.
EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.
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Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).
EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.
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宜普電源轉換公司（EPC）宣佈擴大氮化鎵（GaN）積體電路（IC）系列，實現性能更高、更小巧且採用飛行時間（ToF）技術的雷射雷達應用，包括機器人、無人機、3D感測器，遊戲和自動駕駛汽車等應用。
宜普電源轉換公司（EPC）宣佈推出雷射驅動器IC（EPC21603），在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和LVDS邏輯電平輸入，面向飛行時間（ToF）雷射雷達系統，用於機器人、無人機、擴增實境和遊戲等應用。
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The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.
EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.
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Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.
EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments.
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