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GaN Application Base Widens, Adoption Grows

GaN Application Base Widens, Adoption Grows

Mature, low-cost manufacturing and proven reliability spur use in EVs, smartphones, and consumer electronics.

Efficient Power Conversion (EPC) has logged more than 100 emerging applications for its eGaN FETs and ICs. Alex Lidow, the company’s CEO, said the five fastest-growing applications are lidar systems for robotics, drones, consumer products, driver alertness systems, and autonomous vehicles; DC-DC converters for AI systems, servers, and telecom power systems; motor drives for e-mobility and robotics; satellite systems, including motor drives and DC-DC power supplies that require radiation hardness; and solar power point trackers.

Semiconductor Engineering
December, 2021
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Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

Chipset handles 48-V DC-DC conversion in high-density computing, BLDC motor drives

EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EE World Online
December, 2021
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EPC公司推出65 A ePower晶片組,重新定義功率轉換

EPC公司推出65 A ePower晶片組,重新定義功率轉換

宜普電源轉換公司(EPC)推出ePower晶片組系列。該系列集成了100 V氮化鎵驅動器和場效應電晶體,可實現高達65 A的輸出電流,爲高功率密度應用提供更高的性能和更小型化的解決方案,包括DC/DC轉換和馬達控制等應用。

宜普電源轉換公司宣佈推出100 V、65 A的積體電路晶片組,專爲48 V DC/DC轉換而設計,用於高密度運算應用和用於電動汽車、機器人和無人機的48 V BLDC馬達控制器。

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EPC推出用於高功率密度電源轉換和光達應用的100 V eGaN功率電晶體

EPC推出用於高功率密度電源轉換和光達應用的100 V eGaN功率電晶體

EPC公司爲電源系統設計工程師提供全新的100 V、23 mΩ 功率電晶體(EPC2070),它採用微型芯片級封裝並提供34 A脉衝電流,非常適合 60 W、48 V 電源轉換器、光達和 LED 照明等應用。

宜普電源轉換公司(EPC)宣佈推出100 V的氮化鎵電晶體(EPC2070),具有23 mΩ 的最大導通阻抗和34 A脉衝輸出電流,可在細小的1.1 mm2佔板面積實現高效功率轉換。

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GaN Devices for Smaller, Lighter, Smoother Motor Drives

GaN Devices for Smaller, Lighter, Smoother Motor Drives

Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

Low-Cost Motors Match Premium Motor Drive Performance with eGaN FETs for eBikes, eMotion, Drones, and Robots

The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN® FET

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EPC21601 eToF Laser Driver IC Wins ASPENCORE’s World Electronics Achievement Award – Product of the Year 2021 Power Semiconductor / Driver IC

EPC21601 eToF Laser Driver IC  Wins ASPENCORE’s World Electronics Achievement Award –  Product of the Year 2021 Power Semiconductor / Driver IC

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

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Motor Driver Applications in Space

Motor Driver Applications in Space

As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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基於eGaN FET的2 kW、48V/12V DC/DC轉換器, 讓輕度混合動力汽車實現更高效、更小、更快的雙向轉換器

基於eGaN FET的2 kW、48V/12V DC/DC轉換器, 讓輕度混合動力汽車實現更高效、更小、更快的雙向轉換器

EPC9163是一款兩相48 V/12 V雙向轉換器,可提供2 kW的功率和實現96.5%的效率,是適用於輕度混合動力汽車和備用電池裝置的小型化解決方案。

宜普電源轉換公司(EPC)宣佈推出EPC9163,這是一款 2 kW、兩相的48 V /12 V雙向轉換器演示板,可在非常小的佔板面積上實現96.5%的效率。該演示板的設計具有可擴展性 – 並聯兩個轉換器可以實現4 kW的功率,或者並聯三個轉換器以實現6 kW。該板採用8個100 V 的eGaN® FET(EPC2218),並由模塊控制,該模塊採用Microchip公司的dsPIC33CK256MP503 16位數位控制器。

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EPC公司的40 V eGaN FET是高功率密度電訊、 網通和運算解决方案的理想元件

EPC公司的40 V eGaN FET是高功率密度電訊、 網通和運算解决方案的理想元件

EPC推出了40 V、1.3 mΩ的氮化鎵場效應電晶體 (eGaN® FET),元件型號爲EPC2067,專爲設計人員而設。EPC2067比MOSFET更小、更高效、更可靠,適用於高性能且空間受限的應用。

宜普電源轉換公司(EPC)是增强型矽基氮化鎵功率電晶體和積體電路的全球領導者。新推的EPC2067(典型值爲 1.3 mΩ、40 V)擴大了可選的低壓元件,可立即供貨。

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50 W、12 V/60 V且基於eGaN FET的升壓轉換器, 爲筆記型電腦和PC顯示器背光提供高效、簡單和低成本的解決方案

50 W、12 V/60 V且基於eGaN FET的升壓轉換器, 爲筆記型電腦和PC顯示器背光提供高效、簡單和低成本的解決方案

50 W、12 V/60 V且基於eGaN® FET的同步升壓轉換器採用簡單、低成本的拓樸結構,可實現 95.3%的峰值效率和低温升。

宜普電源轉換公司(EPC)宣佈推出雙向降壓或反向升壓轉換器演示板(EPC9162)。該演示板用於同步轉換器時採用100 V的EPC2052元件,以及用於同步自舉FET電路時,採用EPC2038元件。

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New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

New Textbook, GaN Power Devices and Applications from Efficient Power Conversion (EPC) Now Available

GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

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LiDAR System Design of ToF Laser Driver with GaN

LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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Efficient Power Conversion (EPC) and innosonix Address Power Consumption and Overall Efficiency Demands for High-end Audio Amplifier Application with eGaN FET Design

Efficient Power Conversion (EPC) and innosonix Address Power  Consumption and Overall Efficiency Demands for High-end Audio Amplifier Application with eGaN FET Design

EL SEGUNDO, Calif. — September 2021 — Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase the total power efficiency by 5%.

The EPC2059 is a 6.8 mΩ, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for high-end amplifier applications. The low on resistance and low capacitance of the EPC2059 enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).

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Discovering GaN for Power Design in Space — An Interview with Alex Lidow

Discovering GaN for Power Design in Space — An Interview with Alex Lidow

Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.

Power Electronics News
September, 2021
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