EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range.

EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm² with 100 V_DS. Optimized for high speed switching, the EPC8010 has a maximum R_DS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs.

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