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GaN for Low-cost e-bikes, Drones, and Robotics

GaN for Low-cost e-bikes, Drones, and Robotics

The EPC9193 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost.

EL SEGUNDO, Calif.— March, 2024 — EPC announces the availability of the EPC9193, a 3-phase BLDC motor drive inverter using the EPC2619 eGaN® FET. The EPC9193 operates with a wide input DC voltage ranging from 14 V and 65 V and has two configurations – a standard unit and a high current version:

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EPC推出首款具有最低1mOhm導通電阻的GaN FET

EPC推出首款具有最低1mOhm導通電阻的GaN FET

EPC推出採用緊凑型QFN封裝( 3 mm x 5 mm)的100 V、1 mOhm GaN FET (EPC2361),助力DC/DC轉換、快充、馬達控制和太陽能 MPPT等應用實現更高的功率密度。

2024 年 2 月27日 — 全球增强型氮化鎵 (GaN) 功率 FET 和 IC領域的領導者宜普電源轉換公司(EPC)推出 100 V、1 mOhm (EPC2361)。 這是市場上具有最低導通電阻的 GaN FET,與 EPC 的上一代産品相比,功率密度提高了一倍。

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Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
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EPC的100 V GaN FET助力實現更小的電機驅動器, 用於電動自行車、機器人和無人機

EPC的100 V GaN FET助力實現更小的電機驅動器, 用於電動自行車、機器人和無人機

基於氮化鎵元件的EPC9194逆变器参考設計顯着提高了馬達控制系統的效率、扭矩而同时使得單位重量功率(比功率)增加了一倍以上。該逆变器非常微型,可整合到電機外殼中,從而實現最低的電磁干擾、最高的密度和最輕的重量。

宜普電源轉換公司宣佈推出三相BLDC馬達控制逆變器參考設計(EPC9194)。它的工作輸入電源電壓範圍為14V~60V,可提供高達60 Apk(40 ARMS)的輸出電流。此電壓範圍和功率使該解決方案非常適合用於各種三相BLDC馬達控制器,包括電動自行車、電動滑板車、無人機、機器人和直流伺服馬達。

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40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 APulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

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EPC新推基於GaN FET的150 ARMS馬達控制器参考設計, 用於智慧出行、叉車和大功率無人機

EPC新推基於GaN FET的150 ARMS馬達控制器参考設計, 用於智慧出行、叉車和大功率無人機

基於氮化鎵元件的EPC9186逆变器参考設計增强了高功率應用的電機系统性能、精度、扭矩扭矩和可實現更長的續航里程。

宜普電源轉換公司(EPC)新推EPC9186,這是一款採用EPC2302 eGaN®FET的三相BLDC馬達控制逆变器。EPC9186支持14 V~ 80 V的輸入直流電壓。大功率EPC9186支持電動滑板車、小型電動汽車、農業機械、叉車和大功率無人機等應用。

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GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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EPC新推200 V、10 mΩ、採用QFN封裝的GaN FET, 實現高效靈活設計

EPC新推200 V、10 mΩ、採用QFN封裝的GaN FET, 實現高效靈活設計

宜普電源轉換公司(EPC)推出200 V、10 mΩ的EPC2307,完善了額定電壓為 100 V、150 V和200 V的6個GaN電晶體系列,提供更高的性能、更小的解決方案和易於設計的DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器,以及馬達控制器。

全球增强型氮化鎵FET和IC領導者EPC推出 200 V、10 mΩ的EPC2307,採用耐熱增强型QFN封裝,佔位面積僅為3 mm x 5 mm。

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採用新型車規級EPC GaN FET設計更高解析度光達系統 以實現更先進的自主式系統

採用新型車規級EPC GaN FET設計更高解析度光達系統 以實現更先進的自主式系統

EPC推出80 V、通過AEC-Q101 認證的氮化鎵場效應電晶體(GaN FET)EPC2252,為設計人員提供比矽MOSFET更小和更高效的解決方案,用於車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

作為增强型氮化鎵 (eGaN®)FET和IC的全球領導者,宜普電源轉換公司(EPC)進一步擴大已有現貨供應的車規級氮化鎵電晶體系列,推出80 V、11 mΩ、在 1.5 mm x 1.5 mm封裝內提供75 A脉衝電流的EPC2252,比矽MOSFET更小和更高效,適用於自動駕駛和其他先進駕駛輔助系統應用中的車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

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GaN’s Evolution from Science Project to Mainstream Power Conductor

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

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GaN-Based Low-Voltage Inverter for Electric Scooter Drive System

GaN-Based Low-Voltage Inverter for Electric Scooter Drive System

This paper deals with the application of the latest generation low voltage (up to 80 V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500 W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.

IEEE 2022 AEIT International Annual Conference (AEIT)
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EPC Launches a New Generation of eGaN Technology that Doubles Performance

EPC Launches a New Generation of eGaN Technology that Doubles Performance

Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

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EPC新推150V封裝兼容的氮化鎵元件, 讓高功率密度應用實現靈活設計

EPC新推150V封裝兼容的氮化鎵元件, 讓高功率密度應用實現靈活設計

宜普電源轉換公司 (EPC) 推出150 V、6 mΩ EPC2308 GaN FET,讓高功率密度應用實現更高的性能和更小的解決方案,包括 DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器,以及馬達控制器。

EPC是增强型氮化鎵 (eGaN®)功率FET和IC領域的全球領導者,新推採用更耐熱的QFN封裝且可立即發貨的150 V EPC2308氮化鎵元件,用於電動工具和機器人的馬達控制器、用於工業應用的80 V/100 V高功率密度 DC/DC轉換器、用於充電器、適配器和電源供電的28V~54V同步整流器、智能手機USB快速充電器,以及太陽能優化器和微型逆變器。

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EPC Opens GaN-based Motor Drive Design Application Center in Italy

EPC Opens GaN-based Motor Drive Design Application Center in Italy

The development of gallium nitride technology has ushered in a new age for power electronics. The greater bandgap, critical field, and electron mobility are the three factors that affect GaN technology the most. To concentrate on expanding motor drive applications based on GaN technology in the e-mobility, robotics, drone, and industrial automation areas, EPC has opened a new design application center close to Turin, Italy.

EE Times Europe
September, 2022
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Dispelling a Myth – GaN and Motor Drivers

Dispelling a Myth – GaN and Motor Drivers

There is a commonly held belief in the industry that GaN devices are wasted on inverters for electric motors. After all, if the performance of the system is restricted by the use of a 20KHz PWM, then there can be little benefit in using a material that gains the majority of its advantages from faster switching speeds. However, according to Marco Palma, Director of Motor Drives Systems and Applications at EPC, there are some ways that GaN can still prove effective in that role.

Power Systems Design
September, 2022
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