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Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.
Power Electronics News
May, 2023
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宜普電源轉換公司(EPC) 擴展了其封裝兼容的ePower™ IC系列,提高功率密度和簡化設計以滿足DC/DC應用、馬達控制器和D類音頻放大器的不同功率要求。
繼早前推出的100 V、35 A功率級IC(EPC23102)之後,EPC公司新推兩款100V功率級IC,其額定電流分別為15 A(EPC23104)和25 A(EPC23103)。
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氮化鎵技術發展迅速,在開發出多代全新離散元件後,具備更高效、更小尺寸和成本更低等優勢的新世代積體電路繼續崛起。氮化鎵積體電路讓產品可以更小型化、開關更快、更高效且更易於設計。
Power Systems Design
2021年3月 (第36-39頁)
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EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.
Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts. Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.
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單晶片半橋式氮化鎵功率電晶體EPC2100獲得著名電子雜誌頒發「年度産品大獎」,在競爭激烈的分離式半導體産品類別中被評選爲極具創新性的産品。
宜普電源轉換公司(EPC)的單片半橋式矽基氮化鎵(eGaN®)功率電晶體榮獲《Electronic Products》雜誌頒發2014年「年度産品大獎」。
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EPC9016開發板內含40 V增強型氮化鎵場效應電晶體(eGaN®FET),是一種25 A最大輸出電流並採用並聯配置的電路設計,可提高電流能力達67%,其最優版圖技術可實現最優化效率。
宜普電源轉換公司宣佈推出EPC9016採用半橋式配置的開發板,專為採用氮化鎵場效應電晶體的大電流、高降壓比、降壓中間匯流排轉換器(IBC)應用而設。與採用單一高側(控制)場效應電晶體相比,我們並聯了兩個低側(同步整流器)場效應電晶體使得傳導時間更長。
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This column evaluated the ability to parallel eGaN® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.
EEWeb
By: Alex Lidow
April, 2014
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