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氮化鎵(GaN)積體電路重新定義功率轉換

氮化鎵(GaN)積體電路重新定義功率轉換

氮化鎵技術發展迅速,在開發出多代全新離散元件後,具備更高效、更小尺寸和成本更低等優勢的新世代積體電路繼續崛起。氮化鎵積體電路讓產品可以更小型化、開關更快、更高效且更易於設計。

Power Systems Design
2021年3月 (第36-39頁)
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EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards.  These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.

Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up.  Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.  Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.

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宜普電源轉換公司的單片式eGaN半橋電晶體系列 榮獲《Electronic Products》雜誌頒發 2014年「年度産品大獎」

宜普電源轉換公司的單片式eGaN半橋電晶體系列 榮獲《Electronic Products》雜誌頒發 2014年「年度産品大獎」

單晶片半橋式氮化鎵功率電晶體EPC2100獲得著名電子雜誌頒發「年度産品大獎」,在競爭激烈的分離式半導體産品類別中被評選爲極具創新性的産品。

宜普電源轉換公司(EPC)的單片半橋式矽基氮化鎵(eGaN®)功率電晶體榮獲《Electronic Products》雜誌頒發2014年「年度産品大獎」。

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宜普電源轉換公司推出專為大電流及具高降壓比轉換器應用而設的開發板

EPC9016開發板內含40 V增強型氮化鎵場效應電晶體(eGaN®FET),是一種25 A最大輸出電流並採用並聯配置的電路設計,可提高電流能力達67%,其最優版圖技術可實現最優化效率。

宜普電源轉換公司宣佈推出EPC9016採用半橋式配置的開發板,專為採用氮化鎵場效應電晶體的大電流、高降壓比、降壓中間匯流排轉換器(IBC)應用而設。與採用單一高側(控制)場效應電晶體相比,我們並聯了兩個低側(同步整流器)場效應電晶體使得傳導時間更長。

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How To GaN: Paralleling High Speed eGaN FETS for High Current Applications

This column evaluated the ability to parallel eGaN® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.

EEWeb
By: Alex Lidow
April, 2014

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