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Podcast: GaN and Silicon Carbide | Meeting New Efficiency Standards in The Green Revolution

Podcast: GaN and Silicon Carbide | Meeting New Efficiency Standards in The Green Revolution

As energy efficiency standards increase, high-voltage Silicon Carbide and low-voltage GaN are replacing traditional silicon, enabling cooler, lighter, and more powerful electronics. Join Guy Moxey and Alex Lidow, EPC CEO and Co-founder, and explore how Wolfspeed and EPC technologies complement one another in the race towards a more sustainable future.

Wolfspeed
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寬能隙元件建構高效節能綠世界

寬能隙元件建構高效節能綠世界

以碳化矽(SiC)、氮化鎵(GaN)材料為主流的寬能隙(WBG)半導體功率元件,在節能永續意識抬頭的今日成為各種電源系統應用的寵兒;2022年Tech Taipei系列研討會首度以WBG元件為題,邀請業界重量級業者,從設計、製造、測試等不同面向與現場超過400位聽眾分享最新技術與應用趨勢...

EE Times Taiwan
2022年3月
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Thoughtful Board Design Unlocks the Promise of GaN

Thoughtful Board Design Unlocks the Promise of GaN

Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
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