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宜普電源轉換公司(EPC)和Analog Devices(ADI)公司携手新推的参考設計採用經過全面优化的新型模擬控制器来驅動EPC的氮化鎵場效應電晶體，可實現超過96.5%的效率。
宜普電源轉換公司(EPC)宣佈新推EPC9158，這是一款工作在500 kHz開關頻率的雙輸出同步降壓轉換器参考设计，可將48 V~54 V的輸入電壓轉換為12 V穩壓輸出，可提供高達每相25 A電流或50 A總連續電流。ADI的新型LTC7890同步氮化鎵降壓控制器与EPC的超高效GaN FET相结合，可為高功率密度應用提供佔板面積小且非常高效的解決方案。該解決方案在48 V/12 V 、50 A連續電流下可實現 96.5%的效率。
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Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.
Bodo’s Power Systems
March, 2022
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This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.
Electronics Today
December/January Edition
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宜普電源轉換公司(EPC)為工程師提供更多的設計工具、模型和性能模擬器，用於基於高性能氮化鎵元件的設計。
EPC公司宣佈推出GaN Power Bench™設計工具，幫助工程师實現基於氮化鎵元件的設計的最高性能。eGaN® FET和IC具有快速開關、高效和小尺寸等優勢，可满足當今前沿應用對功率密度的嚴格要求。GaN Power Bench工具可幫助設計工程師為各種應用選擇最合適的氮化鎵元件、模擬和優化設計的熱性能，並提供應用實例和相關檔案，從而可以快速、輕鬆地實現最佳設計的理想性能。
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.
For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.
Compound Semiconductor
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The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.
EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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EPC公司的全新開發板可以被配置為一個降壓轉換器或ZVS D類放大器，展示出基於eGaN FET、採用同步自舉電路的閘極驅動器在高頻工作時可以減少損耗。
宜普電源轉換公司（EPC）推出EPC9066、EPC9067及EPC9068開發板，可以被配置為一個降壓轉換器或ZVS D類放大器。這些開發板專為功率系統設計師而設，對氮化鎵電晶體的優越性能進行評估方面提供了簡易方法，使得設計師的產品可以快速量產。三塊開發板都配備了具有零QRR、同步自舉整流器的閘極驅動器，從而在高達15 MHz的高頻工作條件下可以提高效率。該些開發板在降壓轉換器及D類放大器配置的最大輸出電流為2.7 A。在整個電流範圍都可以降低損耗。
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EPC9118演示板展示採用具高頻開關優勢、電源電壓在48 V或以上的氮化鎵場效應電晶體（eGaN® FET）可易於實現更小型及具更高效率的電源轉換解决方案。
宜普電源轉換公司推出全功能降壓型功率轉換演示電路 --EPC9118演示板，可支持30 V至60 V輸入電壓並转至5 V、 具20 A最高輸出電流及400 kHz頻率的降壓轉換器。它採用EPC2001 及EPC2015增强型氮化鎵（eGaN®)場效應電晶體（FET）及LTC3891降壓控制器。這個降壓轉換器設計是電訊、工業及醫療應用所需的配電解决方案的理想設計。
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在高頻降壓轉換器配備最優的版圖，使得在1MHz 頻率下開關時器件可實現96%以上的效率。
EEWeb
日期：2013年9月
作者：Alex Lidow
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eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.
By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011
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