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EPC GaN FET配以ADI控制器可實現最高功率密度穩壓DC/DC轉換器

EPC GaN FET配以ADI控制器可實現最高功率密度穩壓DC/DC轉換器

宜普電源轉換公司(EPC)和Analog Devices(ADI)公司携手新推的参考設計採用經過全面优化的新型模擬控制器来驅動EPC的氮化鎵場效應電晶體,可實現超過96.5%的效率。

宜普電源轉換公司(EPC)宣佈新推EPC9158,這是一款工作在500 kHz開關頻率的雙輸出同步降壓轉換器参考设计,可將48 V~54 V的輸入電壓轉換為12 V穩壓輸出,可提供高達每相25 A電流或50 A總連續電流。ADI的新型LTC7890同步氮化鎵降壓控制器与EPC的超高效GaN FET相结合,可為高功率密度應用提供佔板面積小且非常高效的解決方案。該解決方案在48 V/12 V 、50 A連續電流下可實現 96.5%的效率。

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EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

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eGaN Technology Reliability and Physics of Failure

eGaN Technology Reliability and Physics of Failure

In this series we will look at the various ways the reliability of eGaN® technology has been validated, and how we are developing models from our understanding of the physics of failures that can help predict failure rates under almost any operating condition. In this first installment and the next, we will look at the field experience from the past six years of GaN transistors use in a variety of applications from vehicle headlamps to medical systems to 4G/LTE telecom systems. Diving into the failure of each and every part leads to some valuable lessons learned.

Planet Analog
Chris Jakubiec, Robert Strittmatter, Ph.D., and Alex Lidow, Ph.D.
March 1, 2016
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