EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN^®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN^® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

面向高功率密度和低成本的DC/DC轉換，EPC9151功率模組利用EPC2152 ePower™功率級實現性能更高和尺寸更小的解決方案。

宜普電源轉換公司（EPC）宣佈推出EPC9151，这是一款300 W、雙向、超小尺寸的1/16磚型DC/DC降壓轉換器模組，其尺寸僅為33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151採用Microchip公司的數位信號控制器（dsPIC33CK）和EPC公司的 ePower™ 功率級集成电路（EPC2152），於300 W、48 V/12 V的轉換器中，可以實現95％以上的效率，而且可以在這個可擴展的兩相設計中增加相數，使得功率可以更高。

美國微芯科技公司（Microchip Technology Inc.）的數位信號控制器（DSC）與宜普電源轉換公司（EPC）的超高效氮化鎵場效應電晶體（eGaN^®FET）的結合，可實現最佳功率密度（730 W/in³），從而實現高效、低成本的DC-DC轉換。

EPC公司宣佈推出1/16磚式、300 W DC/DC穩压器（EPC9143）。 EPC9143功率模組把Microchip dsPIC33CK數位信號控制器（DSC）和最新一代eGaN FET（EPC2053）集成在一起，實現25 A、48 V/12 V和96％效率的功率轉換。

Efficient Power Conversion (EPC) will showcase the company’s latest ePower™ Stage IC family of products showing how GaN technology’s superior performance is transforming power delivery for computing, communications, robotics, and transportation at the PCIM Europe 2020 Digital Days.

EL SEGUNDO, Calif.— June 2020 — The EPC team will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, July 7 – 8. In addition, the company will participate in the event’s virtual exhibit, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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中壓氮化鎵場效應電晶體（eGaN FET）的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時，EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢，積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構，也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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宜普電源轉換公司（EPC）推出全新積體電路(IC)系列的首個產品，為高功率密度應用諸如DC/DC轉換、電機驅動及D類放大器，提供更高性能及更小型化的解決方案。

宜普電源轉換公司（EPC）宣佈推出80 V、12.5 A的功率級積體電路，專為48 V DC/DC轉換而設計，用於具有高功率密度的運算應用及針對電動車的電機驅動器。

知名企業領袖 - 宜普電源轉換公司（EPC）首席執行官Alex Lidow於2009年在市場推出第一個氮化鎵電晶體。 經過了10年的氮化鎵產品銷售，DESIGN & ELEKTRONIK 雜誌編輯Ralf Higgelke與Alex會面並談論氮化鎵技術的最新發展。

DESIGN & ELEKTRONIK雜誌
2020年2月20日
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當矽技術已經到了性能極限，採用氮化鎵元件的全新設計使得氮化鎵技術得以繼續普及。氮化鎵元件的發展還是剛剛起步，它的性能將得以繼續提升、積體電路也將會更具優勢，以及將有更多全新的氮化鎵產品推出市場。

Electronics Weekly
2019年12月
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It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN^® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

根據預測，到2025年，我們的數據將會超過175 zettabyte。當發明了 5G並將最早於2020年在日本舉行的奧運採用、以及通過人工智慧（AI）及機器學習（ML）的發展，建立數據中心和其部署、以及提升目前較舊的數據中心的效能，將進入突飛猛進的時代。

我深信氮化鎵（GaN）功率電晶體是數據中心功率架構的最理想元件，因為需要小型化、高效及快速開關的元件。氮化鎵元件在具48 VIN的所有拓撲，都可以實現最高的效率。

EDN
2019年6月
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目前的氮化鎵場效應電晶體在尺寸及性能方面以飛快的速度發展，而目前為業界樹立基準的氮化鎵元件的性能還可以提升多300倍。

最早採用氮化鎵元件的應用是利用氮化鎵的超快速開關速度，例如面向全自動駕駛車輛和無人機的雷射雷達系統、機械人，以及4G/LTE基站。氮化鎵元件的產量一直在增加，而其價格跟開關速度更慢、尺寸更大型和日益陳舊的MOSFET元件相約。因此，目前正是氮化鎵元件正面攻擊MOSET的時候！。

Bodo’s Power Systems
2019年6月
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為了使得客戶易於集成功率系統，宜普電源轉換公司（EPC）為客戶提供領導業界的氮化鎵功率元件的晶圓。

EPC公司宣佈推出領導業界的增強型氮化鎵元件的晶圓，使得客戶易於集成功率系統。EPC公司的氮化鎵場效應電晶體（eGaN^® FET）及積體電路一直以來都是以單個並包含錫條或錫球的晶片級元件出售。

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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宜普電源轉換公司（EPC）進一步擴大車規級氮化鎵產品系列 -- 全新成員是面向具有高解析度的雷射雷達系統、80 V的EPC2214氮化鎵場效應電晶體，該元件成功通過國際汽車電子協會所制定的AEC Q101應力測試認證。

宜普電源轉換公司（EPC）宣佈再多一個車用氮化鎵(eGaN)元件（80 V的EPC2214）成功通過AEC Q101測試認證，可在車用及其他嚴峻環境支持多種全新應用。

宜普電源轉換公司（EPC）推出兩個全新100 V氮化鎵元件，可以支援伺服器及汽車應用的48 V轉換的要求。 我將在處理器、車用及能量存儲系統等方面探討48 V伺服器的功率轉換解決方案（可參考我的文章 “雙向DC/DC電源供電: 我們應該如何取向？”），未來將在EDN文章中看到。氮化鎵功率電晶體必需是這些不同架構的一部份 -- 我相信沒有其他更優越的元件可以替代氮化鎵元件了 。

Planet Analog
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