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In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.
The GaN speakers address two critical questions shaping the future of wide bandgap:
- The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
- Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
- Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
- Michael de Rooij, VP of applications engineering at EPC
- Balu Balakrishnan, CEO of Power Integrations
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.
For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.
Compound Semiconductor
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Bloomberg Markets
Posted 2016年10月28日
半導體行業的革命者、宜普電源轉換公司(EPC)首席執行長及共同創始人Alex Lidow博士分享高通併購恩智浦半導體有可能面臨文化衝擊
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Bloomberg
2016年10月28日
The number one barrier to improving every electronic product – from smart wearables and laptops to handheld tools and electric cars – is battery technology. The current state-of-the-art in rechargeable batteries, Lithium Ion, has been around for 25 years. As tech goes, that’s pretty old. It’s time for something new, don’t you think?
Fortune
Steve Tobak
May 13, 2016
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