Case Spotlights Next-Gen Tech Replacing Silicon

(El Segundo, California)—Efficient Power Conversion Corporation (EPC), the global leader in gallium nitride (GaN) technology, today filed complaints in federal court and in the U.S. International Trade Commission (ITC) asserting four patents of its foundational patent portfolio against Innoscience (Zhuhai) Technology Company, Ltd. and its affiliates (collectively, Innoscience).  These patents cover core aspects of the design and manufacturing process of EPC’s proprietary enhancement-mode gallium nitride power semiconductor devices.  These patents encompass innovations that enabled GaN-based power devices to mature from a research project to a mass-producible high-volume alternative to silicon-based transistors and integrated circuits with GaN devices having higher efficiency, smaller size, and lower cost. 

我們將在本文討論客戶爲何遲遲未採用氮化鎵技術的一些最常見原因，氮化鎵技術顯然是較舊的矽基功率MOSFET的替代技術。在不深入詳細研究統計數據的情况下，按最常發生推導出一系列原因，並理解某些應用比其他應用更側重氮化鎵技術的某些特性。我們的討論僅限於額定電壓低於400 V的元件，因爲這是EPC公司的氮化鎵場效應電晶體和積體電路的重點應用。

PSD功率系統設計
2022 年3月
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EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019

El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20^th, 2019 at 31^st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at the Marriott Parkview Hotel, Shanghai, China.

Wireless power charging was a big point of discussion with a number of different solutions on the APEC 2018 exhibit floor. The following wireless charging solutions had unique aspects in their strategies; let’s take a look at what I saw over the last few days.

EDN Network
By Steve Taranovich
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SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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