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Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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GaN FET可實現5130 W/in3 的基準功率密度,支持人工智慧和先進計算應用

GaN FET可實現5130 W/in3 的基準功率密度,支持人工智慧和先進計算應用

EPC9159是一款1 kW、48 V/12 V的LLC轉換器,佔板面積僅為17.5 mm x 22.8 mm,可實現 5130 W/in3 最先進的功率密度。

宜普電源轉換公司(EPC)宣佈推出EPC9159參考設計。這是一款48 V/12 V的LLC轉換器,專為48 V高功率密度伺服器電源和DC/DC轉換器而設計。該參考設計可在17.5 mm x 22.8 mm的微小封裝內提供高達1 kW的功率,其功率密度為5130 W/in3。這是在初級側和次級側電路中採用於高開關頻率工作的氮化鎵(GaN)功率元件才可以實現的。

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基於氮化鎵元件的功率轉換解決方案著眼於下一代應用

基於氮化鎵元件的功率轉換解決方案著眼於下一代應用

宜普電源轉換公司(EPC)是增强型氮化鎵 (GaN) FET 和 IC產品的領導者,在紐倫堡舉行的 PCIM Europe 2023展會上分享了關於氮化鎵技術的發展和其應用的演示。 我們與該公司的聯合創始人暨首席執行長 Alex Lidow 就電力電子行業和氮化鎵技術對行業的影響進行了深度交流。

Electronic Design
2023年5月
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GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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EPC新推200 V、10 mΩ、採用QFN封裝的GaN FET, 實現高效靈活設計

EPC新推200 V、10 mΩ、採用QFN封裝的GaN FET, 實現高效靈活設計

宜普電源轉換公司(EPC)推出200 V、10 mΩ的EPC2307,完善了額定電壓為 100 V、150 V和200 V的6個GaN電晶體系列,提供更高的性能、更小的解決方案和易於設計的DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器,以及馬達控制器。

全球增强型氮化鎵FET和IC領導者EPC推出 200 V、10 mΩ的EPC2307,採用耐熱增强型QFN封裝,佔位面積僅為3 mm x 5 mm。

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GaN’s Evolution from Science Project to Mainstream Power Conductor

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Lowest On-resistance 150 V and 200 V Transistors on the Market Now Shipping from GaN Leader EPC

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

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eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN® FETs.

Power Electronics News
December, 2022
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New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

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EPC Launches a New Generation of eGaN Technology that Doubles Performance

EPC Launches a New Generation of eGaN Technology that Doubles Performance

Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

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GaN Power Behind Mild Hybrid Vehicle Electrification

GaN Power Behind Mild Hybrid Vehicle Electrification

With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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基於GaN FET封裝兼容的解決方案可實現性能和成本優化並同時提高功率密度和熱性能

基於GaN FET封裝兼容的解決方案可實現性能和成本優化並同時提高功率密度和熱性能

宜普電源轉換公司(EPC)新推100 V、3.8 mΩ 的氮化鎵場效應電晶體EPC2306,為高功率密度應用提供性能更高和更小的解決方案,包括 DC/DC 轉換、AC/DC 充電器、太陽能優化器和微型逆變器、馬達控制器和D類音頻放大器等應用。

宜普電源轉換公司是增强型氮化鎵 (eGaN®) 功率 FET 和 IC 領域的全球領導者,新推100 V、採用耐熱增强型QFN封裝的EPC2306,用於高密度計算應用的48 V DC/DC轉換、電動汽車和機器人的 48 V BLDC 馬達控制器、太陽能優化器和微型逆變器,以及 D 類音頻放大器

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EPC新推最小型化的100 V、2.2 mΩ 氮化鎵場效應電晶體

EPC新推最小型化的100 V、2.2 mΩ 氮化鎵場效應電晶體

宜普電源轉換公司(EPC)新推100 V、2.2 mΩ的氮化鎵場效應電晶體(EPC2071),爲設計工程師提供比矽MOSFET更小、更高效的元件,用於高性能、佔板面積受限的應用。

全球行業領先供應商宜普電源轉換公司為業界提供增强型氮化鎵(eGaN®)功率場效應電晶體和集成電路,最新推出100 V、典型值爲1.7 mΩ的EPC2071氮化鎵場效應電晶體,爲客戶提供更多可選的低壓氮化鎵電晶體和可以立即發貨。

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從氮化鎵元件的行為確定其性能的模型

從氮化鎵元件的行為確定其性能的模型

氮化鎵場效應電晶體和積體電路的用戶現在有了一個工具來確定應用中需要的降額和降額設計中應考慮的因素。宜普公司開發了一個基于第一原理的物理模型,以解釋氮化鎵電晶體在硬開關時,導通電阻如何上升。本文提供了兩個同步整流應用實例的演示。

Electronic Specifier
2022年5月
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High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
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EPC在APEC 2022展會上展示GaN技術如何 爲48 V應用帶來革命性突破

EPC在APEC 2022展會上展示GaN技術如何 爲48 V應用帶來革命性突破

EPC公司的氮化鎵專家將在APEC展會分享多項現場演示以闡釋氮化鎵技術如何爲許多行業的功率轉換帶來革命性突破,包括計算、通信和e-mobility。

宜普電源轉換公司(EPC)團隊將於3月20日至24日在休斯頓舉行的IEEE應用電力電子會議和博覽會(APEC 2022)上進行多場關於氮化鎵技術的演講和專業研討會,詳請如下。 此外,我們將在1302號展位展出採用新型eGaN®FET 和 IC的客戶的最新產品。

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