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Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Designing An Ultra-Thin Stepdown Converter: Multiphase Vs. Multilevel

Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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車規級80 V EPC2214 eGaN FET使得雷射雷達系統看得更清晰

車規級80 V EPC2214 eGaN FET使得雷射雷達系統看得更清晰

宜普電源轉換公司(EPC)進一步擴大車規級氮化鎵產品系列 -- 全新成員是面向具有高解析度的雷射雷達系統、80 V的EPC2214氮化鎵場效應電晶體,該元件成功通過國際汽車電子協會所制定的AEC Q101應力測試認證。

宜普電源轉換公司(EPC)宣佈再多一個車用氮化鎵(eGaN)元件(80 V的EPC2214)成功通過AEC Q101測試認證,可在車用及其他嚴峻環境支持多種全新應用。

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車規級eGaN FET使得雷射雷達系統看到更清晰、更高效, 並且降低48 V車用功率系統的成本

車規級eGaN FET使得雷射雷達系統看到更清晰、更高效, 並且降低48 V車用功率系統的成本

宜普電源轉換公司(EPC)進一步擴大車規級氮化鎵產品系列 -- 再多兩個產品成功通過國際汽車電子協會所制定的AEC Q101離散式元件應力測試認證。

宜普電源轉換公司(EPC)宣佈再多兩個車用氮化鎵(eGaN)元件成功通過AEC Q101測試認證,可在車用及其他嚴峻環境支持多種全新應用。EPC2206EPC2212是採用晶圓級晶片規模封裝(WLCS) 、分別是80 VDS 和100 VDS的離散電晶體。

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EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

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