宜普電源轉換公司(EPC)擴展了其抗輻射氮化鎵產品系列，新推的100 V產品用於要求嚴格的機載和其他高可靠性環境下的電源轉換解決方案，進一步爲這個產品系列添加第五個成員。

EPC公司宣佈推出100 V、7 mΩ、160 A_Pulsed的抗輻射GaN FET EPC7004。尺寸小至6.56 mm²，其總劑量等級大於1 Mrad，綫性能量轉移（LET）的單一事件效應（SEE）抗擾度為85 MeV/(mg/cm²)。EPC7004與EPC7014、EPC7007、EPC7019和EPC7018元件都是採用晶片級封裝，這與其他商用的氮化鎵場效應電晶體（eGaN^® FET）和IC相同。封裝元件將由EPC Space提供。

宜普電源轉換公司（EPC）新推40 V、1.1 mΩ的氮化鎵場效應電晶體（EPC2066），為設計工程師提供比矽MOSFET更小、更高效的元件，用於高性能、佔板面積受限的應用。

全球行業領先供應商宜普電源轉換公司為業界提供增强型氮化鎵（eGaN^®）功率場效應電晶體和集成電路，新推40 V、典型值爲0.8 mΩ的EPC2066氮化鎵場效應電晶體，為客戶提供更多可選的低壓氮化鎵電晶體和可以立即發貨。

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN^® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.

EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 A_Pulsed, rad-hard eGaN FET in a small 13.9 mm² footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family.  Packaged versions will be available from EPC Space.

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN^®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN^® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

面向高功率密度和低成本的DC/DC轉換，EPC9151功率模組利用EPC2152 ePower™功率級實現性能更高和尺寸更小的解決方案。

宜普電源轉換公司（EPC）宣佈推出EPC9151，这是一款300 W、雙向、超小尺寸的1/16磚型DC/DC降壓轉換器模組，其尺寸僅為33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151採用Microchip公司的數位信號控制器（dsPIC33CK）和EPC公司的 ePower™ 功率級集成电路（EPC2152），於300 W、48 V/12 V的轉換器中，可以實現95％以上的效率，而且可以在這個可擴展的兩相設計中增加相數，使得功率可以更高。

美國微芯科技公司（Microchip Technology Inc.）的數位信號控制器（DSC）與宜普電源轉換公司（EPC）的超高效氮化鎵場效應電晶體（eGaN^®FET）的結合，可實現最佳功率密度（730 W/in³），從而實現高效、低成本的DC-DC轉換。

EPC公司宣佈推出1/16磚式、300 W DC/DC穩压器（EPC9143）。 EPC9143功率模組把Microchip dsPIC33CK數位信號控制器（DSC）和最新一代eGaN FET（EPC2053）集成在一起，實現25 A、48 V/12 V和96％效率的功率轉換。

宜普電源轉換公司（EPC）推出兩個全新100 V氮化鎵元件，可以支援伺服器及汽車應用的48 V轉換的要求。 我將在處理器、車用及能量存儲系統等方面探討48 V伺服器的功率轉換解決方案（可參考我的文章 “雙向DC/DC電源供電: 我們應該如何取向？”），未來將在EDN文章中看到。氮化鎵功率電晶體必需是這些不同架構的一部份 -- 我相信沒有其他更優越的元件可以替代氮化鎵元件了 。

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EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

專為功率系統設計師而設的EPC2052功率電晶體是一種100 V、13.5 mΩ並採用超小型晶片級封裝的電晶體，可實現74 A脈衝輸出電流。面向48 V-12 V DC/DC功率轉換器，這些新一代氮化鎵場效應電晶體工作在500 kHz頻率下，可實現超過97%的效率。如果工作在1 MHz時，則實現超過96%的效率。

宜普電源轉換公司（EPC）宣佈推出100 V的EPC2052氮化鎵場效應電晶體，其占板面積只是2.25平方毫米、最大導通阻抗(R_DS(on))為13.5 mΩ及脈衝輸出電流高達74 A 以支援高效功率轉換。

繼第一至第九階段可靠性測試報告後，EPC公司的第十階段可靠性測試報告進一步豐富知識庫。此報告對超過30,000個元件進行了超過1,800萬小時的應力測試後，沒有元件發生故障。在過去的兩年間，我們所付運的數百萬個元件沒有發生現場失效的情況。

宜普電源轉換公司（EPC）發佈第十階段可靠性測試報告，成功通過車規級AEC-Q101應力測試認證。AEC-Q101認證要求功率場效應電晶體符合最高的可靠性標準，不僅僅要求元件符合數據表內所載的條件而沒有發生故障，也同時要求在應力測試中，具有低漂移。請注意，EPC所採用的晶圓級晶片尺寸封裝（WLCSP）也符合所有針對傳統封裝的測試標準，展示出該封裝具備卓越性能之同時沒有影響到元件的穩固性或可靠性。

In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users.

EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN market and the state-of-the-art for its underlying technology.

作為為支持DC/DC、雷射雷達（LiDAR）、無線電源應用等方面不斷擴大的客戶群進行擴展的一部分，宜普電源轉換公司（EPC）擴大了其在亞洲的團隊，增加的新成員將與整個亞太地區21個地區的客戶保持密切聯繫。

2018年11月28日— 為了支援在亞太地區正在加速的銷售增長，宜普電源轉換公司（EPC）宣佈擴大亞太地區的銷售和FAE團隊，以支援其不斷擴大的客戶群，積極獲取全新的業務發展及抓緊全新的市場商機。