A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.

Power Electronics Tips
February, 2022
Read article

從2010年3月起，氮化鎵（GaN）功率元件已經實現高可靠性並進行量產。本章詳細闡析如何測試出元件在何時開始失效，從而瞭解數據手冊給出的元件工作條件，距離其工作極限值還有多少餘量。而最重要的是，找出元件固有的失效機理，瞭解其失效的根本原因、恒常操作情況、溫度、電氣應力或機械應力等，從而知道產品在一般工作條件下，它的安全使用壽命。

Power Systems Design
2020年3月
閱讀全文