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EPC推出80 V、通過AEC-Q101 認證的氮化鎵場效應電晶體(GaN FET)EPC2252,為設計人員提供比矽MOSFET更小和更高效的解決方案,用於車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。
作為增强型氮化鎵 (eGaN®)FET和IC的全球領導者,宜普電源轉換公司(EPC)進一步擴大已有現貨供應的車規級氮化鎵電晶體系列,推出80 V、11 mΩ、在 1.5 mm x 1.5 mm封裝內提供75 A脉衝電流的EPC2252,比矽MOSFET更小和更高效,適用於自動駕駛和其他先進駕駛輔助系統應用中的車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。
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Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.
eeNews Europe
July 30, 2020
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