與採用傳統矽元件的轉換器相比，採用氮化鎵基高電子遷移率電晶體 (HEMT) 具有許多材料和性能優勢，已廣泛用於消費和工業用功率轉換領域。氮化鎵元件在更高的開關頻率下提高了功率轉換效率，進而實現更低的系統成本和更高的功率密度。隨著功率密度的增加，散熱分析和熱建模變得至關重要。我們將在本文分享EPC的熱量計算器。 EPC公司製造增强型 GaN HEMT 和集成電路，例如支持多種轉換器的半橋元件。

Power Electronics News
2023年11月
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低壓 GaN FET 可實現更小、冷却要求最小化和效率更高的解決方案

與採用傳統的矽基功率 MOSFET的應用相比，低壓 GaN FET（即 100 V）可實現更小，冷却要求最小化和效率更高的解決方案。 本文討論了氮化鎵元件如何應對動態性能需要重複和可靠的表徵的挑戰。 定制氮化鎵夾具和測試板的機械和電氣設計仔細、周全，就可以克服其中許多挑戰，使您能够在設計功率轉換器時，自信地使用這些新型寬能隙元件。

Power Electronics News
2023年7月
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In this article, different power loop layouts are analyzed with simultaneous considerations for thermal management and electric parasitics.

The results show that an improved layout can provide a significant reduction in operating temperature rise while maintaining electrical performance benefits.

EE Power
October, 2022
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宜普電源轉換公司（EPC）新推綫上論壇，為工程師提供產品信息、答疑解難和分享採用氮化鎵技術的應用現狀和發展趨勢。

宜普電源轉換公司宣佈新推"GaN Talk支持論壇"，為工程師提供產品信息和技術支持，從而瞭解氮化鎵（GaN）技術的應用現狀和發展趨勢。該論壇專為工程師、工程專業學生和所有氮化鎵技術愛好者而設，為用戶答疑解難和提供互相交流的平臺。提問可以用主題類別、熱門話題或最新帖子搜索。除了提問外，用戶還可以在論壇使用帖子中的"分享"連結參看所有之前的提問和反饋。

宜普電源轉換公司(EPC)為工程師提供更多的設計工具、模型和性能模擬器，用於基於高性能氮化鎵元件的設計。

EPC公司宣佈推出GaN Power Bench™設計工具，幫助工程师實現基於氮化鎵元件的設計的最高性能。eGaN^® FET和IC具有快速開關、高效和小尺寸等優勢，可满足當今前沿應用對功率密度的嚴格要求。GaN Power Bench工具可幫助設計工程師為各種應用選擇最合適的氮化鎵元件、模擬和優化設計的熱性能，並提供應用實例和相關檔案，從而可以快速、輕鬆地實現最佳設計的理想性能。

This article discusses the challenges that thermal management raises due to increase power density, especially with chip-scale packaging (CSP). What is sometimes overlooked, however, is that CSP eGaN® power FETs and integrated circuits have excellent thermal performance when mounted on standard printed circuit board (PCBs) with simple methods for attaching heat sinks. Simulations, supported by experimental verification, examine the effect of various parameters and heat flow paths to provide guidance on designing for performance versus cost.

Bodo’s Power Systems
February, 2021
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Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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