在超過四十年中，隨著功率MOSFET元件的結構、技術和電路拓撲的創新，可滿足不斷增長的電力需求，因此改善了電源管理的效率和成本。 然而，在這新世紀的發展，隨著矽功率MOSFET元件已經接近其理論極限，其改進速度已大為減慢。 與此同時，一種全新材料 - 氮化鎵（GaN）- 正朝著新的理論性能領域的方向，穩步發展，其性能是老化的MOSFET元件的6,000倍，以及是目前市場的最優越GaN元件的300倍。

EETimes
2020年6月
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Smaller, faster, lower cost, and more integrated, GaN-on-Silicon devices have the confidence of designers across a spectrum of power conversion applications. In this article, Alex Lidow explains why it’s getting harder to avoid using GaN power transistors and ICs.

Electronic Specifier
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Alex Lidow has deep roots in the electronics industry. His father and grandfather founded International Rectifier in 1947. Alex eventually ran the company himself for 12 years. He is currently the CEO of EPC, a company that manufactures gallium nitride-based power transistors and integrated circuits. These products are now found in lidar systems for autonomous vehicles, in 4G/LTE base stations, in DC-DC converters for servers and satellites, and in a wide variety of medical products.

EE Times on Air
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目前的氮化鎵場效應電晶體在尺寸及性能方面以飛快的速度發展，而目前為業界樹立基準的氮化鎵元件的性能還可以提升多300倍。

最早採用氮化鎵元件的應用是利用氮化鎵的超快速開關速度，例如面向全自動駕駛車輛和無人機的雷射雷達系統、機械人，以及4G/LTE基站。氮化鎵元件的產量一直在增加，而其價格跟開關速度更慢、尺寸更大型和日益陳舊的MOSFET元件相約。因此，目前正是氮化鎵元件正面攻擊MOSET的時候！。

Bodo’s Power Systems
2019年6月
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In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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這位在40年前成為博士的科學家曾為世界節省了15%電量，如今他正繼續自己的創新之旅，為人類找到了矽的全新替代材料。

我父親常常教導我：一個人的真正價值，是通過他對社會所作出的貢獻來衡量的。 1975年我進入研究生院學習，那時我的興趣在半導體領域，並且認為我對社會最大的貢獻，就是找到可以替代矽的半導體材料。我的研究生畢業課題從圍繞砷化鎵展開，但是直到在1977年獲得博士學位後，我才發現，作為一種半導體材料，砷化鎵受其基本材料特性所影響，它的應用前景非常有限，於是我轉而專注於研究如何製造出更好的矽基器件。

財富中文網 (Fortune China)
2017年6月15日
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氮化鎵（GaN）功率電晶體專為高效電源轉換而設計，投產已經有7年了。由於氮化鎵元件具備優越的開關速度，因此它推動了新興市場的發展，例如雷射雷達、波峰追蹤及無線充電市場。 這些市場使得氮化鎵產品得以大量投產、實現低生產成本及高可靠性。 這些優勢對於就算是比較保守的設計工程師來說，都是十分吸引的，使得他們在諸如DC/DC轉換器、AC/DC轉換器及汽車應用中，開始了對氮化鎵元件進行評估。那麼，目前120億美元的矽基功率MOSFET市場在轉為氮化鎵電晶體市場的過程中，還有什麼阻力嗎？信心。

Alex Lidow
2017年3月
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人們用矽材料命名了“矽谷”，而矽材料現正面對全新並具有潛力的競爭對手 - 氮化鎵（GaN）材料。有說氮化鎵元件可以取得300億美元的半導體電源供應產業的市場份額。這個市場涵蓋了所有利用牆上的電源插座取得電源的產品—從Apple（AAPL）的iPhone充電器，以至Tesla（TSLA）的豪華電動汽車。

Investor's Business Daily
Allison Gatlin
2016年7月
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Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977.

His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the company’s new, improved form of GaN.

Barron's
Tiernan Ray
June 29, 2016
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There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.

Power Systems Design
By: Dr. John Glaser & Dr. David Reusch, Efficient Power Conversion
June 13, 2016
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增強型氮化鎵場效應電晶體商用化已經超過四年，並不斷滲透及進駐本來被矽功率MOSFET器件所壟斷的應用領域。

Power Pulse
作者：Alex Lidow
2013年10月

在EEWeb Pulse 訪問裡，宜普公司首席執行長Alex Lidow討論如何推動氮化鎵器件的廣泛應用。

EEWeb Pulse
日期：2013年6月

作者 ：Alix Paultre
雜誌 ：Power Systems Design

這個podcast的內容是關於我們與宜普電源轉換公司Alex Lidow的談話內容，Alex主要分享全新氮化鎵器件的技術及它們對電源業界的影響。宜普公司是基於增強型氮化鎵的電源管理器件的領先供應商，為首家公司推出替代功率MOSFET的矽基增強型氮化鎵(eGaN)場效應電晶體，應用範圍包括負載點轉換器、以太網供 電、伺服器、電腦應用的直流-直流轉換器、LED高效照明、行動電話、射頻傳送、太陽能微型逆變器及D類音訊放大器,器件性能比最好的矽功率MOSFET高出很多倍。詳情請瀏覽http://www.powersystemsdesign.com/paultre-on-power---power-gan?a=1&c=6282。

作者：宜普公司首席執行長Alex Lidow博士
日期：在2012年7月2日刊載於Power Pulse.NET網站

大約在2005年Eudyna 與Nitronex首次推出耗盡型射頻電晶體時，氮化鎵電晶體已經出現。之後有很多新的公司加入引進射頻電晶體（如RFMD, Triquint, Cree, 飛思卡爾, Integra, HRL, M/A-COM及其它公司)，以及在電源轉換應用為替代功率MOSFET而設計的電晶體（如Transphorm, 國際整流器公司, GaN Systems, microGaN及宜普電源轉換公司）。本論文主要在討論這個熱鬧的科研現象是代表氮化鎵電晶體已經準備好替代功率MOSFET嗎？如果是，原因是什麼呢？

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Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market.

By Alex Lidow, PhD
Power Electronics Europe
Issue 2, 2010

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A startup led by chip veteran Alex Lidow has officially announced its formation, disclosed its supply-chain partners and unveiled its first products in the emerging gallium nitride (GaN) arena.

By Mark LaPedus
EE Times
March 8, 2010

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The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.

By Margery Conner
EDN
March 5, 2010

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