德州儀器推出的國半LM5113 驅動器榮獲美國電子產品雜誌(Electronic Products)之年度最佳產品獎。該著名行業雜誌的讀者皆為電子設計工程師,經過編輯評審過千於2011年發佈的產品,選出在以下各方面表現優勝的產品：創新設計、在技術或應用方面取得重大發展及具成本和性能超卓優勢。

德州儀器推出業界首款針對增強型氮化鎵（GaN）功率場效應電晶體（FET）而優化的驅動器。與標準金屬氧化物半導體場效應電晶體(MOSFET)相比，由於具有較低的導通電阻(RDS(ON))、閘極電荷(QG)以及超小的體積,增強型GaN FET可以實現更高的效率和功率密度，但是要可靠地驅動這類器件也面臨著新的重大挑戰。國半的LM5113驅動積體電路化解了這些挑戰, 使電源設計人員能夠在各種流行的電源拓撲結構中發揮GaN FET的優勢。

“我們衷心祝賀德州儀器榮獲這個殊榮。LM5113橋式驅動器為設計工程師提供一個確實的plug & play解決方案，加速業界採用eGaN ®FET及其普及化。LM5113釋放了eGaN FET的效能優勢，幫助設計工程師實現電源及系統密度方面的全新性能基準。”宜普電源轉換公司首席執行長Alex Lidow 說。

http://www2.electronicproducts.com/Driving_GaN_FETs_becomes_reality-article-poypo_TI_NatSemi_jan2012-html.aspx

We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.

By Ashok Bindra
How2Power
June, 2011

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氮化镓(GaN)场效应晶体管作为用于高压电源转换电路的开关器件正在不断蚕食硅基场效应晶体管市场。

By Margery Conner
EDN
June 20, 2011

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National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

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