德州儀器公司發佈了一個全新應用於高密度電源轉換器、專門驅動MOSFET及氮化鎵場效應電晶體的低側閘極驅動器(LM5114)。 這個驅動器適用于一系列低侧應用,包括同步整流器及經過功率因數較正的轉換器。加上在2011年推出的業界第一個100V半橋氮化鎵場效應電晶體驅動器(LM5113),這個產品系列提供了完整的隔離DC/DC電源轉換驅動器解決方案,專門驅動應用於電信、網路及資料中心的具大功率輸出特性之氮化鎵場效應電晶體及MOSFET。請瀏覽www.ti.com/gan 以取得詳情、樣片和評估板的資料。

We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.

By Ashok Bindra
How2Power
June, 2011

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氮化镓(GaN)场效应晶体管作为用于高压电源转换电路的开关器件正在不断蚕食硅基场效应晶体管市场。

By Margery Conner
EDN
June 20, 2011

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National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

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