氮化鎵功率製造商的管理層代表雲集歐洲PCIM研討會，包括EPC、Transphorm、GaN Systems、 Infineon 及Navitas，展示他們的重大發展，為氮化鎵技術成為主流技術及為批量應用推進。從五個演講內容來看，預期業界加速採納氮化鎵元件有三個主要原因。

Bodo’s Power Systems
2016年6月1日
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雜誌：EDN
作者：Steve Taranovich
日期：２０１３年３月１５日

隨著功率元件不斷的演進，領先開發者之間的競賽更趨白熱化。業界專家認為在２０１３年中大約有一半的氮化鎵、矽及碳化矽器件的供應商將在製程方面取得進展、提供全新結構及性能，進而為業界提供全新選擇及開發工具。詳情請瀏覽http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

作者 :Ashok Bindra
雜誌 :How2Power Today (2012年12月刊)

在過去的數年間雖然有很多討論關於基於氮化鎵的功率電晶體可以替代普遍使用的矽MOSFET器件，但矽基氮化鎵的功率場效應電晶體可能需要較長的時間才可以在電源轉換領域成為主流器件。目前數個全新應用的出現將有望實現氮化鎵技術所提供的優勢。除了具備商用及高可靠性的條件，氮化鎵器件的獨有特性正在促進全新應用的出現。

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By: Sun Changhua
Digitimes.com
December 20, 2012

www.digitimes.com.tw

eGaN® FET 的高性能正在更快地被DC/DC 電源轉換、負載點轉換器、D類音訊放大器及高頻電路等應用採用,而TI推出業界首款100V半橋GaN FET驅動器(LM5113),經過優化,配合氮化鎵場效應電晶體使用,則更進一步推動eGaN FET在高性能電信、網路以及數據通信中心的應用。

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電子設計技術(2012年4月書刊)

EDN 電子雜誌2012年第04期

Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.

By Margery Conner
EDN
August 25, 2011

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We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.

By Ashok Bindra
How2Power
June, 2011

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氮化镓(GaN)场效应晶体管作为用于高压电源转换电路的开关器件正在不断蚕食硅基场效应晶体管市场。

By Margery Conner
EDN
June 20, 2011

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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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A startup led by chip veteran Alex Lidow has officially announced its formation, disclosed its supply-chain partners and unveiled its first products in the emerging gallium nitride (GaN) arena.

By Mark LaPedus
EE Times
March 8, 2010

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The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.

By Margery Conner
EDN
March 5, 2010

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A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.

Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010

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