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GaN產業版塊動盪宜普如何越級挑戰?

GaN產業版塊動盪宜普如何越級挑戰?

宜普電源轉換公司聯合創辦人暨執行長Alex Lidow表示,GaN的成本競爭力亦與Si MOSFET並駕齊驅,潛在爆發力更有過之而無不及,目前最關鍵就是得重塑諸多研究者的老舊觀念,認為GaN昂貴到碰不得。GaN的技術正迎來轉捩點,在先進運算、車用電子、太空電子及消費電子等新型應用設計多數採GaN技術,而非Si MOSFET。

DIGITIMES Asia
2023年9月
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25 Autonomous Vehicles Influencers to Follow by 2020

25 Autonomous Vehicles Influencers to Follow by 2020

The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Characterization of Wide Bandgap Power Semiconductor Devices Published by The Institution of Engineering and Technology

Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

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矽、氮化鎵與碳化矽器件的比拼:我的功率設計應該選用哪一個製程及供應商?

雜誌:EDN
作者:Steve Taranovich
日期:2013年3月15日

隨著功率元件不斷的演進,領先開發者之間的競賽更趨白熱化。業界專家認為在2013年中大約有一半的氮化鎵、矽及碳化矽器件的供應商將在製程方面取得進展、提供全新結構及性能,進而為業界提供全新選擇及開發工具。詳情請瀏覽http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

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