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40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 APulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

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宜普電源轉換公司(EPC)推出第二代40V及16mΩ功率電晶體,進一步擴大其業界領先的增強型氮化鎵(eGaN) 場效應電晶體產品系列範圍

2011年8月23日星期二

宜普電源轉換公司(EPC)推出第二代40V及16mΩ功率電晶體,進一步擴大其業界領先的增強型氮化鎵(eGaN®) 場效應電晶體產品系列範圍

EPC2014採用符合RoHS(有害物質限制)條例要求的無鉛封裝,以增強其高頻開關性能。

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