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In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.
Energies Journal
October, 2021
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基於氮化鎵材料的場效應電晶體正在顛覆功率轉換市場和替代矽基MOSFET。 與MOSFET相比,更快速的氮化鎵場效應電晶體(GaN FET)可以在最細小的體積內實現更高的開關速度。 氮化鎵元件的承諾是可以大大縮減電源供應器的體積及重量。為了實現最高的潛在性能, 這些具備高性能的氮化鎵電晶體需要最優化的閘極驅動器。
Peregrine Semiconductor
2016年7月12日
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As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products.
By Johan Strydom PhD, Director of Application Engineering EPC
Bodo’s Power Systems
November, 2010
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