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Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

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40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

40 V Rad Hard GaN FETs Set New Performance Standards for Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.

EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 APulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

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GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

GaN Transistors Bring Newest Rad Hard Technology to Demanding Space Applications

Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .

EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family.  Packaged versions will be available from EPC Space.

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EPC第十五階段產品可靠性測試報告 根據實際應用經驗,預測氮化鎵元件壽命

EPC第十五階段產品可靠性測試報告 根據實際應用經驗,預測氮化鎵元件壽命

宜普電源轉換公司(EPC)發佈第十五階段產品可靠性測試報告,進一步豐富了關於氮化鎵元件可靠性的知識庫和展示了 EPC eGaN 產品的穩健耐用性已在實際應用中得到驗證。

EPC 宣佈發佈其第十五階段產品可靠性測試報告,記錄了持續使用測試元件至失效的方法,並針對太陽能優化器光達感測器DC/DC 轉換器等實際應用,加入了具體的可靠性指標和預測數據。

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採用新型車規級EPC GaN FET設計更高解析度光達系統 以實現更先進的自主式系統

採用新型車規級EPC GaN FET設計更高解析度光達系統 以實現更先進的自主式系統

EPC推出80 V、通過AEC-Q101 認證的氮化鎵場效應電晶體(GaN FET)EPC2252,為設計人員提供比矽MOSFET更小和更高效的解決方案,用於車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

作為增强型氮化鎵 (eGaN®)FET和IC的全球領導者,宜普電源轉換公司(EPC)進一步擴大已有現貨供應的車規級氮化鎵電晶體系列,推出80 V、11 mΩ、在 1.5 mm x 1.5 mm封裝內提供75 A脉衝電流的EPC2252,比矽MOSFET更小和更高效,適用於自動駕駛和其他先進駕駛輔助系統應用中的車規級光達、48 V/12 V DC/DC轉換和低電感馬達控制器。

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新型80 V、15 A eToF™雷射驅動器GaN IC 可實現更高功率密度和更具成本效益的光達系統設計

新型80 V、15 A eToF™雷射驅動器GaN IC 可實現更高功率密度和更具成本效益的光達系統設計

宜普電源轉換公司(EPC)推出新型氮化鎵積體電路EPC21701,這是一款 80 V雷射驅動器IC,可提供15 A脉衝電流,適用於飛行時間(ToF)光達應用,包括真空吸塵器、機器人、3D安全攝像頭和 3D感測器。

EPC 宣佈推出EPC21701,這是一款單晶片雷射驅動器,包含80 V、40 A FET、閘極驅動器和3.3邏輯電平輸入,用於飛行時間光達系統,包括用於機器人、監控系統和真空吸塵器。 它專為用於手勢識別、飛行時間 (ToF)測量、機器人視覺或工業安全的光達系統量身定制。

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GaN’s Evolution from Science Project to Mainstream Power Conductor

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

New Automotive Qualified GaN FETs for Vehicle Electronics and Advanced Autonomy from EPC

EPC introduces two new 80 V AEC-Q101 qualified GaN FETs, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive 48 V- 12 V DC-DC conversion, infotainment, and lidar for autonomous driving.

EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs, expands the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80 V, 6 mΩ EPC2204A that delivers 125 A pulsed current in a 2.5 mm x 1.5 mm footprint and the 80 V, 3.2 mΩ EPC2218A that delivers 231 A pulsed current is a 3.5 mm x 1.95 mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.

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EPC推出具有最高功率密度和效率的100 V抗輻射電晶體, 用於要求嚴格的航太應用

EPC推出具有最高功率密度和效率的100 V抗輻射電晶體, 用於要求嚴格的航太應用

宜普電源轉換公司(EPC)擴展了其抗輻射氮化鎵產品系列,新推的100 V產品用於要求嚴格的機載和其他高可靠性環境下的電源轉換解決方案,進一步爲這個產品系列添加第五個成員。

EPC公司宣佈推出100 V、7 mΩ、160 APulsed的抗輻射GaN FET EPC7004。尺寸小至6.56 mm2,其總劑量等級大於1 Mrad,綫性能量轉移(LET)的單一事件效應(SEE)抗擾度為85 MeV/(mg/cm2)。EPC7004與EPC7014EPC7007EPC7019EPC7018元件都是採用晶片級封裝,這與其他商用的氮化鎵場效應電晶體(eGaN® FET)和IC相同。封裝元件將由EPC Space提供。

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EPC新推於市場上具有最低導通電阻的100 V抗輻射電晶體, 用於要求嚴格的航太應用

EPC新推於市場上具有最低導通電阻的100 V抗輻射電晶體, 用於要求嚴格的航太應用

宜普電源轉換公司(EPC)擴展了其抗輻射氮化鎵產品系列,新推的100 V元件用於要求嚴格的機載和其他高可靠性環境的電源轉換解決方案,與目前市場上的任何100 V耐輻射電晶體相比,它具有最低的導通電阻。

EPC公司宣佈推出100 V、3.9 mΩ、345 APulsed的抗輻射GaN FET EPC7018 r,尺寸爲13.9 mm2,其總劑量等級大於1 Mrad,綫性能量轉移(LET)的單一事件效應(SEE)抗擾度爲85 MeV/(mg/cm2)。與EPC7014、EPC7007和EPC7019耐輻射產品系列相同,都是採用晶片級封裝。封裝元件由EPC Space.提供。

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Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron and EPC Collaborate to Introduce a High-Power Density 350 V Gallium Nitride (GaN) Half Bridge Intelligent Power Module (IPM) That is 60% Smaller Than Comparable Silicon Solutions and Lower C

Sensitron introduces the SPG025N035P1B GaN half-bridge module using the 350 V EPC2050 eGaN® FET from Efficient Power Conversion (EPC)

EL SEGUNDO, Calif.— May 2022, Reducing size and cost were key concerns of Sensitron when designing their latest generation GaN power modules. By replacing traditional silicon FETs with EPC’s 350 V, EPC2050 GaN FET, Sensitron was able to reduce the size of their solution by 60% while also improving the module’s already excellent junction-to-case thermal conduction. The SPG025N035P1B from Sensitron is a high-power density 350 V, 20 A GaN half bridge with an integrated gate drive, optimized for stray inductance and switching performance at 500 khz. Rated at 20 A, the module can be used to control over 3 kW. Sensitron’s proprietary topside cooling technology on this ultra-small, lightweight high power density package (1.10" x 0.70" x 0.14") allows for optimal thermal performance. The SPG025N035P1B was designed for commercial, industrial, and aerospace applications.

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EPC新推實現超低導通電阻的200 V抗輻射電晶體, 用於要求嚴格的航太應用

EPC新推實現超低導通電阻的200 V抗輻射電晶體, 用於要求嚴格的航太應用

宜普電源轉換公司(EPC)擴展了其抗輻射氮化鎵產品系列,新推的200 V產品用於要求嚴格的機載和其他高可靠性環境下的電源轉換解決方案,它具備超低導通電阻和極小型化等優勢。

EPC公司宣佈推出200 V、25 mΩ、80 APulsed的抗輻射GaN FET EPC7007。尺寸小至5.76 mm2,其總劑量等級大於1 Mrad,綫性能量轉移(LET)的單一事件效應(SEE)抗擾度為85 MeV/(mg/cm2)。與商用eGaN FET和IC系列相同,採用芯片級封裝。 封裝元件將由EPC Space提供。

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EPC新推面向光達應用的積體電路通過車規認證

EPC新推面向光達應用的積體電路通過車規認證

宜普電源轉換公司(EPC)宣佈推出通過車規認證的電晶體和積體電路最新成員,面向飛行時間(ToF)光達應用,讓客戶實現具有更高的性能和更小的解決方案,用於機器人、無人機、3D 感測器和自動駕駛車輛等應用。

EPC公司宣佈推出 EPC2221,這是一款共源雙路氮化鎵場效應電晶體,額定電壓爲100 V、58 mΩ 和 20 A脈衝電流,可用於機器人、監控系統、無人機、自動駕駛車輛和吸塵器的光達系統。

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EPC 新推 350 V的氮化鎵功率電晶體,比同類矽元件小 20 倍及成本更低

EPC 新推 350 V的氮化鎵功率電晶體,比同類矽元件小 20 倍及成本更低

氮化鎵功率電晶體EPC2050專爲功率系統設計人員而設計,在極小的晶片級封裝中實現 350 V、80 mΩ 最大 RDS(on)和26 A 峰值電流,是多電平轉換器、電動汽車充電、太陽能逆變器、光達和 LED 照明的理想元件。

宜普電源轉換公司(EPC)宣佈推出 EPC2050,這是一款 350 V GaN 電晶體,最大 RDS(on) 為 80 mΩ,脉衝輸出電流爲 26 A。 EPC2050 的尺寸僅為 1.95 mm x 1.95 mm。與採用等效矽元件的解決方案相比,基於EPC2050的解決方案的佔板面積小十倍。

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CES 2022: GaN Technology for the Next Future

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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EPC21601 eToF Laser Driver IC Wins ASPENCORE’s World Electronics Achievement Award – Product of the Year 2021 Power Semiconductor / Driver IC

EPC21601 eToF Laser Driver IC  Wins ASPENCORE’s World Electronics Achievement Award –  Product of the Year 2021 Power Semiconductor / Driver IC

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

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LiDAR System Design of ToF Laser Driver with GaN

LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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氮化鎵和 碳化矽元件的下一個浪潮

氮化鎵和 碳化矽元件的下一個浪潮

根據將氮化鎵和碳化矽材料的電子從價帶轉移到導帶所需的能量,氮化鎵和碳化矽元件被指定爲寬帶隙 (WBG) 半導體——碳化矽元件約爲 3.2 eV,氮化鎵元件則約爲 3.4 eV,而矽元件只有1.1 eV 。WBG 的擊穿電壓更高,在某些應用中可以達到 1,700 V。 在今年 5 月舉行的綫上PCIM Europe展會上,幾家公司展示了他們在 氮化鎵和碳化矽技術方面的最新創新,並且就 WBG 技術的發展方向分享了其獨特見解。

EE Times – Europe
2021 年 7 月
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