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In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.
The GaN speakers address two critical questions shaping the future of wide bandgap:
- The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
- Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
- Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
- Michael de Rooij, VP of applications engineering at EPC
- Balu Balakrishnan, CEO of Power Integrations
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宜普電源轉換公司聯合創辦人暨執行長Alex Lidow接受DIGITIMES專訪,提到GaN主要會被應用在650V及以下市場。反之碳化矽則是主導650V以上的市場,它可望取代矽基絕緣閘極雙極性電晶體。宜普也在開發對速度及尺寸特性極為要求的400V以下市場。且致力於製造比Si功率元件擁有更高性能、更具成本競爭力的GaN元件。
DIGITIMES Asia
2023年9月
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宜普電源轉換公司(EPC) 與世界先進積體電路股份有限公司(VIS) 攜手合作生產八吋氮化鎵晶圓,透過VIS高品質的製造能力,進一步强化EPC在氮化鎵功率轉換市場的領導地位。
發佈單位:宜普電源轉換公司、世界先進公司
發佈日期:111年12月6日
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