氮化鎵(GaN)是一種全新的使能技術，可實現更高的效率、顯著減小系統尺寸、更輕和在應用中取得矽元件無法實現的性能。那麽，為什麽關於氮化鎵半導體仍然有如此多的誤解？事實又是怎樣的呢？

This post was originally published by Dr. John Glaser & Dr. David Reusch on June 13, 2016 on the Power Systems Design web site.

Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low R_DS(on)and charge.

Enhancement-mode GaN power devices, (eGaN^® FETs and ICs) provide the path for users to differentiate their end products. This new technology gives significantly higher efficiencies in the ever-present power supply and delivery circuits that fuel our gadgets and electronic equipment.

As the sales manager for the Americas, I am in the enviable position of working with customers to create a new vision of excellence so they continue to lead in their market space and contribute optimizing power consumption by reducing energy consumption.

Power systems designs introducing new technologies and approaches is always met with curiosity and evaluation. Customers always ask the most fundamental and far-reaching questions about the attributes and implementation of new technologies. Therefore, I thought documenting the most common questions I have received will help others considering the use of GaN technology pave the way to their confident adoption of this transitional technology.

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal–oxide–semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let’s look at three key risk factors: supply chain risk, cost risk, and reliability risk.