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In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.
The GaN speakers address two critical questions shaping the future of wide bandgap:
- The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
- Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
- Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
- Michael de Rooij, VP of applications engineering at EPC
- Balu Balakrishnan, CEO of Power Integrations
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Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.
Power Electronics News
May, 2023
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In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same RDS(on) as previous generation devices in die that are half the size.
How2Power
November, 2022
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In this article, different power loop layouts are analyzed with simultaneous considerations for thermal management and electric parasitics.
The results show that an improved layout can provide a significant reduction in operating temperature rise while maintaining electrical performance benefits.
EE Power
October, 2022
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采访视频 - 宜普电源转换公司的首席执行官 Alex Lidow与Electronic Design媒体讨论了氮化镓技术的未来发展、普及率及其在电源供电和其他技术中的应用。
Electronic Design
2022年3月
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A recent design for an ultra-high speed, low-impedance pulse generator to evaluate oscilloscope probe performance and for determining the feasibility of an in-socket load for ASIC emulation using EPC eGaN™ FET, EPC2037 reveals just how fast these power devices are.
Signal Integrity
March 12, 2020
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Alex Lidow, CEO of Efficient Power Conversion, talks to Leo Laporte about Gallium Nitride, and how it is being used to create the next generation of microchips and wirelessly power the world.
This Week in Technology
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In this installment of the ‘How to GaN’ series we will discuss the 4th generation of eGaN FETs in 48 VIN applications and evaluate the thermal performance of the chipscale packaging of high voltage lateral eGaN FETs.
EEWeb
By: Alex Lidow
December, 2014
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