eGaN^®场效应晶体管及集成电路

eGaN场效应晶体管及集成电路

评估板套件/演示电路板

评估板套件/演示电路板

什么是氮化镓（GaN）？

什么是氮化镓（GaN）？

为何选择氮化镓（GaN）？

为何选择氮化镓（GaN）？

氮化镓（GaN）何去何从？

氮化镓（GaN）何去何从？

向GaN技术专家提问

How to GaN

氮化镓器件的可靠性

氮化镓器件的可靠性

装配资源

装配资源

EPC书刊

EPC书刊

eGaN^® FETs and ICs for emobility

GaN技术杂谈博客的最新消息

Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input

Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input

Making a Fast, Efficient, Small 350 V Half Bridge Module with eGaN FETs

Making a Fast, Efficient, Small 350 V Half Bridge Module with eGaN FETs

GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size

GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size