When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 V_IN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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氮化镓器件对提升主流应用的效率的贡献很大，例如在传统硅基12 V - 1 V负载点 DC/DC转换器。基于eGaN集成电路的12 V转到1 V、12 A负载转换器在5 MHz的频率下，可以实现78%峰值效率及1000 W/in³ 功率密度，而成本则低于每瓦0.2美元。

Power Systems Design
2019年1月
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本章讨论由于低压硅基氮化镓（GaN）器件具备超快速的开关速度，因此实现了很多全新应用的出现。这些应用推动了行业的改革，例如面向全自动驾驶汽车的激光雷达（lidar)、面向5G通信应用的包络跟踪，以及家用和用于办公室的大面积无线电源技术。此外，我们会探讨氮化镓功率器件如何为手术用的机械人带来精准的控制，从而推动了医疗行业的最新发展。

Power Systems Design
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