氮化镓功率制造商的管理层代表云集欧洲PCIM研讨会，包括EPC、Transphorm、GaN Systems、 Infineon 及Navitas，展示他们的重大发展，为氮化镓技术成为主流技术及为批量应用推进。从五个演讲内容来看，预期业界加速采纳氮化镓器件有三个主要原因。

Bodo’s Power Systems
2016年6月1日
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杂志：EDN
作者：Steve Taranovich
日期：２０１３年３月１５日

随着功率元件不断的演进，领先开发者之间的竞赛更趨白热化。业界专家认为在２０１３年中大约有一半的氮化镓、硅及碳化硅器件的供应商将在工艺方面取得进展、提供全新结构及性能，进而为业界提供全新选择及开发工具。详情请浏览http://www.edn.com/design/power-management/4409627/1/Si-vs--GaN-vs--SiC--Which-process-and-supplier-are-best-for-my-power-design-

作者：Ashok Bindra
杂志：How2Power Today （2012年12月刊）

在过去的数年间虽然有很多讨论关于基于氮化镓的功率晶体管可以替代普遍使用的硅MOSFET器件，但硅基氮化镓的功率场效应晶体管可能需要较长的时间才可以在电源转换领域成为主流器件。目前数个全新应用的出现将有望实现氮化镓技术所提供的优势。除了具备商用及高可靠性的条件，氮化镓器件的独有特性正在促进全新应用的出现。

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By: Sun Changhua
Digitimes.com
December 20, 2012

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eGaN® FET 的高性能正在更快地被DC/DC 电源转换、负载点转换器、D类音频放大器及高频电路等应用采用，而TI推出业界首款100V半桥GaN FET驱动器（LM5113），经过优化，配合氮化镓场效应晶体管使用，则更进一步推动eGaN FET在高性能电信、网络以及数据通信中心的应用。

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电子设计技术（2012年4月书刊

EDN 电子杂志2012年第04期

Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.

By Margery Conner
EDN
August 25, 2011

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众所周知，宜普电源转换公司(EPC)推出商用化增强型硅基氮化镓场效应晶体管(宜普称之为eGaN FET)产品已经超过一年多时间了。目前宜普公司正在与合作伙伴一起实现eGaN FET的专用驱动器，使其可以工作在更高电压、更低栅极电荷条件下，仍具更低的RDS(ON)，以及没有反向恢复损耗(QRR)——所有这些特性都在比硅产品更小的裸片面积上实现。相比硅MOSFET，eGaN FET实际上可以显著提升品质因数(FOM)。

By Ashok Bindra
How2Power
June, 2011

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GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits.

By Margery Conner
EDN
June 20, 2011

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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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A startup led by chip veteran Alex Lidow has officially announced its formation, disclosed its supply-chain partners and unveiled its first products in the emerging gallium nitride (GaN) arena.

By Mark LaPedus
EE Times
March 8, 2010

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The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.

By Margery Conner
EDN
March 5, 2010

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A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.

Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010

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