宜普电源转换公司（EPC）是增强型硅基氮化镓（eGaN^®）功率场效应晶体管和集成电路的全球行业领先供应商，其首席执行官兼共同创办人Alex Lidow博士于2020全球电子成就奖（WEAA）评选中，荣获年度杰出贡献人物奖。

全球电子成就奖旨在评选并表彰对推动全球电子产业创新做出杰出贡献的企业和管理者，以及在业界处于领先地位的产品。由ASPENCORE全球资深产业分析师组成的评审委员会以及各地区（亚洲、美国、欧洲）网站用户群进行综合评定共同评选出得奖者。

硅功率MOSFE追不上目前功率电子业界的演进步伐 -- 业界需要具备高效、高功率密度及细小的外型尺寸的器件。业界看到硅MOSFET已经达到它的理论极限，从而需要找出全新器件。氮化镓（GaN）是一种HEMT器件，具备附加增值的优势，被证明为可以支持全新应用的要求。

Power Electronics News
2020年3月25日
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eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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这位在40年前成为博士的科学家曾为世界节省了15%电量，如今他正继续自己的创新之旅，为人类找到了硅的全新替代材料。

我父亲常常教导我：一个人的真正价值，是通过他对社会所作出的贡献来衡量的。1975年我进入研究生院学习，那时我的兴趣在半导体领域，并且认为我对社会最大的贡献，就是找到可以替代硅的半导体材料。我的研究生毕业课题从围绕砷化镓展开，但是直到在1977年获得博士学位后，我才发现，作为一种半导体材料，砷化镓受其基本材料特性所影响，它的应用前景非常有限，于是我转而专注于研究如何制造出更好的硅基器件。

财富中文网 (Fortune China)
2017年6月15日
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氮化镓（GaN）场效应晶体管随时准备在电压调节器及直流-直流电源应用替代硅功率器件。 与硅MOSFET器件相比，氮化镓晶体管的开关速度快很多及具有更低的导通电阻（R_DS(on)），从而可以实现具有更高功效的功率电源，对我们来说是好的。如果你正在使用氮化镓器件设计功率电路，你必需理解器件的开关速度。

读过的文章

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.

But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.

By: Graham Pitcher
New Electronics
December 13, 2011
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