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氮化镓（eGaN®）功率晶体管继续为电源转换应用设定业界领先的性能基准。由于氮化镓器件具有更低的导通电阻、更低的电容、更大的电流及卓越的热性能，因此使得功率转换器可实现超过98%的效率。
宜普电源转换公司宣布推出六个新一代功率晶体管及相关的开发板。这些由30 V至200 V的产品在很多应用可大大降低导通电阻（RDS(on)）并可增强输出电流性能，例如具高功率密度的直流-直流转换器、负载点（POL）转换器、直流-直流及交流-直流转换器的同步整流器、马达驱动器、发光二极管照明及工业自动化等广阔应用。
全新氮化镓场效应晶体管(eGaN®FET)及相关开发板
| EPC2023 |
30 |
1.3 |
590 |
150 |
EPC9031 |
EPC9018 |
| EPC2024 |
40 |
1.5 |
550 |
150 |
EPC9032 |
|
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EL SEGUNDO, Calif.--(BUSINESS WIRE)—Efficient Power Conversion Corporation (EPC) today announced that the company has made available on its web site SPICE models for all of its enhancement mode GaN transistors.
TSPICE, PSPICE, and LTSPICE device models have been developed to help the designer of advanced GaN-based power conversion circuits and systems understand the value of this new power transistor family and reduce their time-to-market with benchmark products. These free downloads are available at:
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